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参数资料
| 型号： | MT46V64M8 |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | 16 Meg x 8 x 4 banks DDR SDRAM(16M x 8 x 4组,双数据速率同步动态RAM) |
| 中文描述： | 16梅格× 8 × 4银行DDR SDRAM内存（1,600 × 8 × 4组，双数据速率同步动态RAM）的 |
| 文件页数： | 16/70页 |
| 文件大小： | 2524K |
| 代理商： | MT46V64M8 |
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16
512Mb: x4, x8, x16 DDR SDRAM
512Mx4x8x16DDR_A.p65
–
Rev. A; Pub 10/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
512Mb: x4, x8, x16
DDR SDRAM
ADVANCE
Operations
BANK/ROW ACTIVATION
Before any READ or WRITE commands can be
issued to a bank within the DDR SDRAM, a row in that
bank must be “opened.” This is accomplished via the
ACTIVE command, which selects both the bank and
the row to be activated, as shown in Figure 4.
After a row is opened with an ACTIVE command,
a READ or WRITE command may be issued to that
row, subject to the
t
RCD specification.
t
RCD (MIN)
should be divided by the clock period and rounded up
to the next whole number to determine the earliest
clock edge after the ACTIVE command on which a
READ or WRITE command can be entered. For ex-
ample, a
t
RCD specification of 20ns with a 133 MHz
clock (7.5ns period) results in 2.7 clocks rounded to 3.
This is reflected in Figure 5, which covers any case where
2 <
t
RCD (MIN)/
t
CK
≤
3. (Figure 5 also shows the same
case for
t
RCD; the same procedure is used to convert
other specification limits from time units to clock
cycles).
A subsequent ACTIVE command to a different row
in the same bank can only be issued after the previous
active row has been “closed” (precharged). The mini-
mum time interval between successive ACTIVE com-
mands to the same bank is defined by
t
RC.
A subsequent ACTIVE command to another bank
can be issued while the first bank is being accessed,
which results in a reduction of total row-access over-
head. The minimum time interval between successive
ACTIVE commands to different banks is defined by
t
RRD.
Figure 5
Example: Meeting
t
RCD (
t
RRD) MIN When 2 <
t
RCD (
t
RRD) MIN/
t
CK
≤
3
Figure 4
Activating a Specific Row in
a Specific Bank
CS#
WE#
CAS#
RAS#
CKE
A0-A12
RA
RA = Row Address
BA = Bank Address
HIGH
BA0,1
BA
CK
CK#
t
COMMAND
BA0, BA1
ACT
ACT
NOP
RRD
tRCD
CK
CK#
Bank x
Bank y
A0-A12
Row
Row
NOP
RD/WR
NOP
Bank y
Col
NOP
T0
T1
T2
T3
T4
T5
T6
T7
DON
’
T CARE
NOP
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