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| 型号： | MTA85812S-10I/SS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 8-BIT, OTPROM, 10 MHz, RISC MICROCONTROLLER, PDSO20 |
| 封装： | 0.209 INCH, PLASTIC, SSOP-20 |
| 文件页数： | 28/72页 |
| 文件大小： | 760K |
| 代理商： | MTA85812S-10I/SS |
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MTA85XXX
DS40115C-page 34
1995 Microchip Technology Inc.
TABLE 15-3:
DC CHARACTERISTICS OF MICROCONTROLLER MTA858XX-04 (INDUSTRIAL)
MTA858XX-10 (INDUSTRIAL)
DC CHARACTERISTICS
Power Supply Pins
Standard Operating Conditions
Operating temperature
-40
°C ≤ TA ≤ +85°C for industrial
Characteristic
Sym
Min
Typ* Max Units
Conditions
Supply Voltage
VDD
3.0
4.5
6.25
5.5
V
XT, RC and LP options
HS option
RAM Data Retention
Voltage (Note 3)
VDR
1.5
V
Device in SLEEP mode
VDD start voltage to
guarantee Power-On Reset
VPOR
VSS
V
See POR section in microcontroller datasheet
for details on Power-On Reset
VDD rise rate to guarantee
Power-On Reset
SVDD
0.05*
V/ms See POR section in microcontroller datasheet
for details on Power-On Reset
Supply Current (Note 2)
IDD
1.8
2.4
mA
XT and RC options (C-04)
FOSC = 4 MHz, VDD = 5.5V
5.8
13
mA
HS option (C-10)
FOSC = 4 MHz, VDD = 5.5V
17
40
A
LP option, Industrial, EEPROM standby
FOSC = 32 kHz, VDD = 3.0V, WDT disabled
Power Down Current (Note 4)
WDT enabled
WDT disabled
IPD
5
0.8
14
12
A
VDD = 3.0V, Industrial
*
These parameters are characterized but not tested.
Note 1: Data in the column labeled "Typ" is based on characterization results at 25
°C. These parameters are for
design guidance only and are not tested for, or guaranteed by Microchip Technology.
Note 2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern, and temperature also have an impact on
the current consumption.
a) The test conditions for all IDD measurements in active operation mode are:
OSC1= external square wave, from rail to rail; all I/O pins tristated, pulled to VDD, except RB7 driving '1'
for SEE VDD, RT = VDD, MCLR = VDD; WDT enabled/disabled as specified; EEPROM in write condition
(except LP mode).
b) For standby current measurements, the conditions are the same, except that the device is in SLEEP
mode and SDA and SCL are tied to VSS.
Note 3: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.
Note 4: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD and VSS;
SDA and SCL tied to VSS.
Note 5: Does not include current through Rext. The current through the resistor can be estimated by the formula
Ir = VDD/2Rext (mA) with Rext in k
.
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