参数资料
型号: ST72F652R4T1
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PQFP64
封装: 14 X 14 MM, TQFP-64
文件页数: 43/160页
文件大小: 974K
代理商: ST72F652R4T1
ST7265
137/160
13.8 I/O PORT PIN CHARACTERISTICS
13.8.1 General Characteristics
Subject to general operating conditions for VDD,fOSC,and TA unless otherwise specified.
Figure 82. Two typical Applications with unused I/O Pin
Figure 83. Typical IPU vs. VDD with VIN=VSS
Notes:
1. Unless otherwise specified, typical data are based on TA=25°C and VDD=5V.
2. Data based on characterization results, not tested in production.
3. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
4. Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of the I/O for
example or an external pull-up or pull-down resistor (see Figure 82). Data based on design simulation and/or technology
characteristics, not tested in production.
5. The RPU pull-up equivalent resistor is based on a resistive transistor (corresponding IPU current characteristics de-
scribed in Figure 83). This data is based on characterization results, not tested in production.
6. Data based on characterization results, not tested in production.
7. To generate an external interrupt, a minimum pulse width has to be applied on an I/O port pin configured as an external
interrupt source.
Symbol
Parameter
Conditions
Min
Typ 1)
Max
Unit
VIL
Input low level voltage 2)
0.3xVDD
V
VIH
Input high level voltage 2)
0.7xVDD
Vhys
Schmitt trigger voltage hysteresis 3)
400
mV
IL
Input leakage current
VSSVINVDD
±1
A
IS
Static current consumption 4)
Floating input mode
200
RPU
Weak pull-up equivalent resistor 5)
VIN=VSS
VDD=5V
TBD
k
VDD=3V
TBD
CIO
I/O pin capacitance
5
pF
tf(IO)out
Output high to low level fall time 6)
CL=50pF
Between 10% and 90%
25
ns
tr(IO)out
Output low to high level rise time 6)
25
tw(IT)in
External interrupt pulse time 7)
1tCPU
10k
UNUSE D I/O PORT
ST72XXX
10k
UNUSE D I/O PORT
ST72XXX
VDD
Ipu (
A)
VDD (V)
TO BE CHARACTERIZED
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