参数资料
型号: W25Q16DWZPIP
厂商: WINBOND ELECTRONICS CORP
元件分类: PROM
英文描述: 16M X 1 SPI BUS SERIAL EEPROM, PDSO8
封装: 6 X 5 MM, GREEN , PLASTIC, WSON-8
文件页数: 42/83页
文件大小: 1268K
代理商: W25Q16DWZPIP
W25Q16DW
Publication Release Date: April 01, 2011
- 47 -
Preliminary - Revision A
10.2.24 64KB Block Erase (D8h)
The Block Erase instruction sets all memory within a specified block (64K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “D8h” followed a 24-bit block address (A23-A0). The Block Erase
instruction sequence is shown in Figure 23a & 23b.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase instruction
will commence for a time duration of tBE (See AC Characteristics). While the Block Erase cycle is in
progress, the Read Status Register instruction may still be accessed for checking the status of the BUSY
bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished and the
device is ready to accept other instructions again. After the Block Erase cycle has finished the Write
Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase instruction will not be
executed if the addressed page is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0)
bits (see Status Register Memory Protection table).
/CS
CLK
DI
(IO
0)
DO
(IO
1)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (D8h)
High Impedance
8
9
29
30
31
24-Bit Address
23
22
2
1
0
*
Mode 0
Mode 3
= MSB
*
Figure 23a. 64KB Block Erase Instruction (SPI Mode)
/CS
CLK
Mode 0
Mode 3
0
1
IO
0
IO
1
IO
2
IO
3
D8h
Instruction
2
3
4
5
20
16
12
8
21
17
22
18
23
19
13
9
14
10
15
11
A23-16
6
7
4
0
5
1
6
2
7
3
A15-8
A7-0
Mode 0
Mode 3
Figure 23b. 64KB Block Erase Instruction (QPI Mode)
相关PDF资料
PDF描述
W25Q20BWUXIP 2M X 1 SPI BUS SERIAL EEPROM, PDSO8
W25Q32BVSSAG 32M X 1 SPI BUS SERIAL EEPROM, PDSO8
W25Q32BVSSAP 32M X 1 SPI BUS SERIAL EEPROM, PDSO8
W25Q32BWSNIP 4M X 8 SPI BUS SERIAL EEPROM, DSO8
W25Q32BWSSIG 4M X 8 SPI BUS SERIAL EEPROM, PDSO8
相关代理商/技术参数
参数描述
W25Q16V 制造商:WINBOND 制造商全称:Winbond 功能描述:16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q16VSFIG 功能描述:IC FLASH 16MBIT 80MHZ 16SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步,DDR II 存储容量:18M(1M x 18) 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA(13x15) 包装:托盘 其它名称:71P71804S200BQ
W25Q16VSSIG 功能描述:IC FLASH 16MBIT 80MHZ 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步,DDR II 存储容量:18M(1M x 18) 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA(13x15) 包装:托盘 其它名称:71P71804S200BQ
W25Q16VZPIG 制造商:WINBOND 制造商全称:Winbond 功能描述:16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q20BW 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 2M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI