参数资料
型号: W949D2CBJX6E
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 16M X 32 DDR DRAM, 5 ns, PBGA90
封装: 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90
文件页数: 24/60页
文件大小: 1160K
代理商: W949D2CBJX6E
W949D6CB / W949D2CB
512Mb Mobile LPDDR
Publication Release Date: Jun, 14, 2011
- 30 -
Revision A01-006
7.5.5 Consecutive Read Bursts
CL=2
DO n
= Don't Care
BA,Coln
READ
NOP
READ
NOP
CK
Command
Address
DQS
DQ
DQS
DQ
1) DO n (or b)=Data Out from column n (or column b)
2) Burst Length=4,8 or 16 (if 4, the bursts are concatenated; if 8 or 16, the second burst interrupts the first)
3) Read bursts are to an active row in the bank
4) Shown with nominal tAC, tDQSCK and tDQSQ
BA,Colb
CL=3
DO b
7.5.6 Non-Consecutive Read Bursts
A READ command can be initiated on any clock cycle following a previous READ command. Non-consecutive
Reads are shown in following figure.
CL=2
DO n
= Don't Care
BA,Col n
READ
NOP
READ
NOP
CK
Command
Address
DQS
DQ
DQS
DQ
1) DO n (or b) =Data Out from column n (or column b)
2) BA,Col n (b) =Bank A,Column n (b)
3) Burst Length=4; 3 subsequent elements of Data Out appear in the programmed order following DO n (b)
4) Shown with nominal tAC, tDQSCK and tDQSQ
DO b
CL=3
BA,Col b
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W949D2CBJX6ETR 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 166MHZ, 65NM
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