参数资料
型号: W949D2CBJX6E
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 16M X 32 DDR DRAM, 5 ns, PBGA90
封装: 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90
文件页数: 39/60页
文件大小: 1160K
代理商: W949D2CBJX6E
W949D6CB / W949D2CB
512Mb Mobile LPDDR
Publication Release Date: Jun, 14, 2011
- 44 -
Revision A01-006
7.13 Deep Power Down
The Deep Power-Down (DPD) mode enables very low standby currents. All internal voltage generators inside the
LPDDR SDRAM are stopped and all memory data is lost in this mode. All the information in the Mode Register and
the Extended Mode Register is lost.
Deep Power-Down is entered using the BURST TERMINATE command
except that CKE is registered Low. All
banks must be in idle state with no activity on the data bus prior to entering the DPD mode. While in this state, CKE
must be held in a constant Low state.
To exit the DPD mode, CKE is taken high after the clock is stable and NOP commands must be maintained for at
least 200
μs. After 200μs a complete re-initialization is required following steps 4 through 11 as defined for the
initialization sequence.
7.13.1 Deep Power-Down Entry and Exit
tRP
T=200us
Exit DPD
Mode
Enter DPD
Mode
= Don't Care
1) Clock must be stable before exiting Deep Power-Down mode. That is, the clock must be cycling
within specifications by Ta0
2) Device must be in the all banks idle state prior to entering Deep Power-Down mode
3) 200us is required before any command can be applied upon exiting Deep-Down mode
4) Upon exiting Deep Power-Down mode a PRECHARGE ALL command must be issued, followed
by two REFRESH commands and a load mode register sequence
NOP
DPD
NOP
Valid
Ta2
Ta1
Ta0
T0
T1
CK
CKE
Command
Address
DQS
DQ
DM
相关PDF资料
PDF描述
WPD1M16C-80TJI 1M X 16 FAST PAGE DRAM, 80 ns, PDSO42
WPS512K8LC-55TM 512K X 8 STANDARD SRAM, 55 ns, PDSO32
WPS512K8LT-85TI 512K X 8 STANDARD SRAM, 85 ns, PDSO32
W25P012AD-7 32K X 32 STANDARD SRAM, 7 ns, PQFP100
WME128K8-120CC 128K X 8 EEPROM 5V, 120 ns, CDIP32
相关代理商/技术参数
参数描述
W949D2CBJX6ETR 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 166MHZ, 65NM
W949D2CBJX6G 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPDDR
W949D2KBJX5E 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
W949D2KBJX5I 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
W949D2KBJX6E 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 166MHZ 制造商:Winbond Electronics Corp 功能描述:IC MEMORY