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参数资料
| 型号： | W949D2CBJX6E |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 16M X 32 DDR DRAM, 5 ns, PBGA90 |
| 封装： | 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90 |
| 文件页数： | 25/60页 |
| 文件大小： | 1160K |
| 代理商： | W949D2CBJX6E |
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W949D6CB / W949D2CB
512Mb Mobile LPDDR
Publication Release Date: Jun, 14, 2011
- 31 -
Revision A01-006
7.5.7 Random Read Bursts
Full-speed random read accesses within a page or pages can be performed as shown in following figure.
CL=2
DO n
= Don't Care
BA,Col n
READ
NOP
CK
Command
Address
DQS
DQ
DQS
DQ
1) DO n ,etc. = Data Out from column n, etc.
nI, xI, etc. = Data Out elements, according to the programmed burst order
2) BA, Col n = Bank A, Column n
3) Burst Length=2,4,8 or 16 in cases shown (if burst of 4,8 or 16, the burst is interrupted)
4) Reads are to active rows in any banks
BA,Col b
CL=3
BA,Col x
READ
BA,Col g
DO nI
DO xI
DO x
DO b
DO g
DO bI
DO gI
DO bI
DO b
DO xI
DO x
DO nI
7.5.8 Read Burst Terminate
Data from any READ burst may be truncated with a BURST TERMINATE command, as shown in figure. The
BURST TERMINATE latency is equal to the read (CAS) latency, i.e., the BURST TERMINATE command should be
issued X cycles after the READ command where X equals the desired data-out element pairs.
CL=2
= Don't Care
BA,Col n
READ
NOP
CK
Command
Address
DQS
DQ
DQS
DQ
1) DO n = Data Out from column n
2) BA,Col n = Bank A, Column n
3) Cases shown are bursts of 4,8 or 16 terminated after 2 data elements.
4) Shown with nominal tAC, tDQSCK and tDQSQ
CL=3
BST
NOP
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W949D2CBJX6ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 166MHZ, 65NM |
| W949D2CBJX6G | 制造商:WINBOND 制造商全称:Winbond 功能描述:512Mb Mobile LPDDR |
| W949D2KBJX5E | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W949D2KBJX5I | 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W949D2KBJX6E | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 166MHZ 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
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