参数资料
型号: W949D2CBJX6E
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 16M X 32 DDR DRAM, 5 ns, PBGA90
封装: 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90
文件页数: 58/60页
文件大小: 1160K
代理商: W949D2CBJX6E
W949D6CB / W949D2CB
512Mb Mobile LPDDR
Publication Release Date: Jun, 14, 2011
- 7 -
Revision A01-006
SIGNAL NAME
TYPE
FUNCTION
DESCRIPTION
CKE
Input
Clock Enable
CKE HIGH activates, and CKE LOW deactivates internal clock
signals, and device input buffers and output drivers. Taking CKE
LOW provides PRECHARGE, POWER DOWN and SELF
REFRESH operation (all banks idle), or ACTIVE POWER DOWN
(row ACTIVE in any bank). CKE is synchronous for all functions
except for SELF REFRESH EXIT, which is achieved
asynchronously. Input buffers, excluding CK,
CK and CKE, are
disabled during power down and self refresh mode which are
contrived for low standby power consumption.
LDQS, UDQS
(x16);
DQS0~DQS3
(x32)
I/O
Data Strobe
Output with read data, input with write data. Edge-aligned with
read data, centered with write data. Used to capture write data.
x16:
LDQS: DQ0~DQ7; UDQS: DQ8~DQ15.
x32:
DQS0: DQ0~DQ7; DQS1: DQ8~DQ15;
DQS2: DQ16~DQ23; DQS3: DQ24~DQ31.
VDD
Supply
Power
Power supply for input buffers and internal circuit.
VSS
Supply
Ground
Ground for input buffers and internal circuit.
VDDQ
Supply
Power for I/O
Buffer
Power supply separated from VDD, used for output drivers to
improve noise.
VSSQ
Supply
Ground for I/O
Buffer
Ground for output drivers.
NC
-
Non Connect
Non connection pin.
4.2 Addressing Table
ITEM
512 Mb
Number of banks
4
Bank address pins
BA0,BA1
Auto precharge pin
A10/AP
X16
Row addresses
A0-A12
Column addresses
A0-A9
tREFI(s)
7.8
x32
Row addresses
A0-A12
Column addresses
A0-A8
tREFI(s)
7.8
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