参数资料
型号: FDSS2407
厂商: Fairchild Semiconductor
文件页数: 12/13页
文件大小: 0K
描述: MOSFET N-CH 62V 3.3A 8-SOIC
产品变化通告: Product Obsolescence 13/Aug/2010
标准包装: 2,500
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 62V
电流 - 连续漏极(Id) @ 25° C: 3.3A
开态Rds(最大)@ Id, Vgs @ 25° C: 110 毫欧 @ 3.3A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 4.3nC @ 5V
输入电容 (Ciss) @ Vds: 300pF @ 15V
功率 - 最大: 2.27W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
SPICE Thermal Model
REV July 2004
FDSS2407T
Copper Area =0.5 in 2
CTHERM1 Junction c2 1.2e-4
CTHERM2 c2 c3 2e-3
CTHERM3 c3 c4 2e-2
CTHERM4 c4 c5 3.0e-2
CTHERM5 c5 c6 4e-2
CTHERM6 c6 c7 7e-2
CTHERM7 c7 c8 2e-1
RTHERM1
RTHERM2
th
8
JUNCTION
CTHERM1
CTHERM2
CTHERM8 c8 Ambient 2.8
7
RTHERM1 Junction c2 1.4
RTHERM2 c2 c3 2.0
RTHERM3 c3 c4 2.8
RTHERM4 c4 c5 9.0
RTHERM5 c5 c6 18.0
RTHERM6 c6 c7 26.0
RTHERM7 c7 c8 28.0
RTHERM8 c8 Ambient 29.0
SABER Thermal Model
Copper Area = 0.5 in 2
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th c2 =1.2e-4
ctherm.ctherm2 c2 c3 =2e-3
ctherm.ctherm3 c3 c4 =2e-2
ctherm.ctherm4 c4 c5 =3.0e-2
ctherm.ctherm5 c5 c6 =4e-2
ctherm.ctherm6 c6 c7 =7e-2
ctherm.ctherm7 c7 c8 =2e-1
ctherm.ctherm8 c8 tl =2.8
rtherm.rtherm1 th c2 =1.4
rtherm.rtherm2 c2 c3 =2.0
rtherm.rtherm3 c3 c4 =2.8
rtherm.rtherm4 c4 c5 =9.0
rtherm.rtherm5 c5 c6 =18.0
rtherm.rtherm6 c6 c7 =26.0
rtherm.rtherm7 c7 c8 =28.0
rtherm.rtherm8 c8 tl =29.0
}
RTHERM3
RTHERM4
RTHERM5
RTHERM6
RTHERM7
RTHERM8
6
5
4
3
2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
CTHERM7
CTHERM8
FDSS2407 Rev. A
12
tl
AMBIENT
www.fairchildsemi.com
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