参数资料
型号: FDSS2407
厂商: Fairchild Semiconductor
文件页数: 9/13页
文件大小: 0K
描述: MOSFET N-CH 62V 3.3A 8-SOIC
产品变化通告: Product Obsolescence 13/Aug/2010
标准包装: 2,500
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 62V
电流 - 连续漏极(Id) @ 25° C: 3.3A
开态Rds(最大)@ Id, Vgs @ 25° C: 110 毫欧 @ 3.3A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 4.3nC @ 5V
输入电容 (Ciss) @ Vds: 300pF @ 15V
功率 - 最大: 2.27W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
Thermal Resistance vs. Mounting Pad Area
( T – T )
(EQ. 1)
P
DM = -------------------------------
θ JA = 79.9 + -------------------------------
R
(EQ. 2)
The maximum rated junction temperature, T JM , and the
thermal resistance of the heat dissipating path determines
the maximum allowable device power dissipation, P DM , in an
application. Therefore the application’s ambient
temperature, T A ( o C), and thermal resistance R θ JA ( o C/W)
must be reviewed to ensure that T JM is never exceeded.
Equation 1 mathematically represents the relationship and
serves as the basis for establishing the rating of the part.
JM A
R θ JA
In using surface mount devices such as the SO8 package,
the environment in which it is applied will have a significant
influence on the part’s current and maximum power
dissipation ratings. Precise determination of P DM is complex
and influenced by many factors:
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
2. The number of copper layers and the thickness of the
board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Fairchild provides thermal information to assist the
designer’s preliminary application evaluation. Figure 25
defines the R θ JA for the device as a function of the top
copper (component side) area. This is for a horizontally
positioned FR-4 board with 1oz copper after 1000 seconds
of steady state power with no air flow. This graph provides
the necessary information for calculation of the steady state
junction temperature or power dissipation. Pulse
applications can be evaluated using the Fairchild device
Spice thermal model or manually utilizing the normalized
maximum transient thermal impedance curve.
Thermal resistances corresponding to other copper areas
can be obtained from Figure 25 or by calculation using
Equation 2. The area, in square inches is the top copper
area including the gate and source pads.
15
0.14 + Area
The transient thermal impedance (Z θ JA ) is also effected by
varied top copper board area. Figure 26 shows the effect of
copper pad area on single pulse transient thermal
impedance. Each trace represents a copper pad area in
square inches corresponding to the descending list in the
graph. Spice and SABER thermal models are provided for
each of the listed pad areas.
Copper pad area has no perceivable effect on transient
thermal impedance for pulse widths less than 100ms. For
pulse widths less than 100ms the transient thermal
impedance is determined by the die and package.
Therefore, CTHERM1 through CTHERM5 and RTHERM1
through RTHERM5 remain constant for each of the thermal
models. A listing of the model component values is available
in Table 1.
200
R θ JA = 79.9 + 15/(0.14+Area )
150
100
50
0.001 0.01 0.1 1 10
AREA, TOP COPPER AREA (in 2 )
Figure 25. Thermal Resistance vs Mounting
Pad Area
160
120
COPPER BOARD AREA - DESCENDING ORDER
0.020 in 2
0.140 in 2
0.257 in 2
0.380 in 2
0.493 in 2
80
40
0
10 -1
10 0
10 1
10 2
10 3
t, RECTANGULAR PULSE DURATION (s)
Figure 26. Thermal Impedance vs Mounting Pad Area
FDSS2407 Rev. A
9
www.fairchildsemi.com
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