参数资料
型号: FDSS2407
厂商: Fairchild Semiconductor
文件页数: 5/13页
文件大小: 0K
描述: MOSFET N-CH 62V 3.3A 8-SOIC
产品变化通告: Product Obsolescence 13/Aug/2010
标准包装: 2,500
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 62V
电流 - 连续漏极(Id) @ 25° C: 3.3A
开态Rds(最大)@ Id, Vgs @ 25° C: 110 毫欧 @ 3.3A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 4.3nC @ 5V
输入电容 (Ciss) @ Vds: 300pF @ 15V
功率 - 最大: 2.27W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
Typical Characteristics (Continued) T A = 25°C unless otherwise noted
100
10
STARTING T J = 25 o C
100 μ s
10
1ms
10ms
STARTING T J = 150 o C
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
0.1
SINGLE PULSE
T J = MAX RATED
T A = 25 o C
R θ JA =
55 o C/W
1
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
1
10
100
0.01
0.1
1
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
15
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
T J = 25 o C
15
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T A = 25 o C
V GS = 5V
10
5
0
T J = 150 o C
T J = -55 o C
10
5
0
V GS = 10V
V GS = 3.5V
V GS = 3V
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
0.5
1.0
1.5
2.0
2.5
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
240
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
2.0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
210
I D = 3.3A
1.5
180
150
1.0
120
I D = 1A
V GS = 10V, I D = 3.3A
90
2
4
6
8
10
0.5
-80
-40
0
40
80
120
160
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
FDSS2407 Rev. A
5
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
www.fairchildsemi.com
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