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参数资料
| 型号： | FDSS2407 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/13页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 62V 3.3A 8-SOIC |
| 产品变化通告： | Product Obsolescence 13/Aug/2010 |
| 标准包装： | 2,500 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 62V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 110 毫欧 @ 3.3A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4.3nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 300pF @ 15V |
| 功率 - 最大： | 2.27W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
MOSFET Maximum Ratings T A =25°C unless otherwise noted
Symbol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
62
±20
Units
V
V
Drain Current
V GS = 5V, R θ JA =
I D
E AS
P D
T J , T STG
Continuous (T A = 25 o C, V GS = 10V, R θ JA = 55 o C/W)
Continuous (T A = 25 o C, 55 o C/W)
Pulsed
Single Pulse Avalanche Energy ( Note 1)
Power dissipation
Derate above 25 o C
Operating and Storage Temperature
3.3
3.0
Figure 4
140
2.27
18
-55 to 150
A
A
A
mJ
W
mW/ o C
o C
Thermal Characteristics
C/W
Pad Area = 0.027 in (17.4 mm ) (Note 3)
C/W
R θ JA
R θ JA
R θ JA
Pad Area = 0.50 in 2 (323 mm 2 ) (Note 2)
2 2
Pad Area = 0.006 in 2 (3.87 mm 2 ) (Note 4)
55
180
200
o
o
o C/W
Package Marking and Ordering Information
Device Marking
2407
Device
FDSS2407
Package
SO-8
Reel Size
330 mm
Tape Width
12 mm
Quantity
2500
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 5mA, V GS = 0V
62
-
-
V
V DS = 15V, V GS =0V
-
-
1
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 15V, V GS =0V,
T A =150 o C
V GS = ±20V
-
-
-
-
250
±100
μ A
nA
On Characteristics
V GS(TH)
r DS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V GS = V DS , I D = 250 μ A
I D = 3.3A, V GS = 10V
I D = 3.0A, V GS = 5V
1
-
-
-
0.099
0.115
3
0.110
0.132
V
?
Dynamic Characteristics
C ISS
C OSS
C RSS
R G
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 5V
V DS = 15V, V GS = 0V,
f = 75kHz
V GS = 0V to 5V
-
-
-
-
-
300
140
16
8500
3.3
-
-
-
-
4.3
pF
pF
pF
?
nC
Q g(TH)
Q gs
Q gs2
Q gd
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V GS = 0V to 1V
V DD = 30V
I D = 3.3A
I g = 1.0mA
-
-
-
-
0.4
1.2
0.8
2.0
0.5
-
-
-
nC
nC
nC
nC
FDSS2407 Rev. A
2
www.fairchildsemi.com
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相关代理商/技术参数 |
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|---|---|
| FDSS2407_SB82086 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDSS2407S_B82086 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDSSM0.0625 | 制造商:Alpha 3 Manufacturing 功能描述: |
| FDSSM0.25 | 制造商:Alpha 3 Manufacturing 功能描述: |
| FDST/FDT-08-POLE/PED-HB | 制造商:3M Electronic Products Division 功能描述: |
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