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参数资料
| 型号： | HY27SS16561M-FCP |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | PROM |
| 英文描述： | 16M X 16 FLASH 1.8V PROM, 10000 ns, PBGA63 |
| 封装： | 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-63 |
| 文件页数： | 15/44页 |
| 文件大小： | 644K |
| 代理商： | HY27SS16561M-FCP |
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Rev 0.4 / Jun. 2004
22
Preliminary
HY27SS(08/16)561M Series
HY27US(08/16)561M Series
256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
Automatic Page 0 Read Description.
At powerup, once the supply voltage has reached the threshold level, VCCth, all digital outputs revert to their reset
state and the internal NAND device functions (reading, writing, erasing) are enabled.
The device then automatically switches to read mode where, as in any read operation, the device is busy for a time
tBLBH1 during which data is transferred to the Page Buffer. Once the data transfer is complete the Ready/Busy signal
goes High. The data can then be read out sequentially on the I/O bus by pulsing the Read Enable, R, signal. Figures 18
and 19 show the power-up waveforms for devices featuring the Automatic Page 0 Read option.
Sequential Row Read Disabled
If the device is delivered with sequential row read disabled and Automatic Read page0 at Power-up, only the first page
(page0) will be automatically read after the power-on sequence. Refer to Figure 18.
Sequential Row Read Enabled
If the device is delivered with the Automatic Page 0 Read option only (Sequential Row Read Enabled), the device will
automatically enter Sequential Row Read mode after the power-up sequence, and start reading Page 0, Page 1, etc.,
until the last memory location is reached, each new page being accessed after a time tBLBH1.
The Sequential Row Read operation can be inhibited or interrupted by de-asserting CE (set to VIH) or by issuing a com-
mand. Refer to Figure 19.
Note: (1). VCCth is equal to 2.0V for 3.3V and to 1.5V for 1.8V Power Supply devices.
Data
N+1
Data
N
Last
Data
N+2
tBLBH1
Busy
Vccth (1)
Vcc
ALE
CLE
I/O
RE
RB
CE
WE
Data Output
from Address N to Last Byte or Word in Page
Figure 18. Sequential Row Read Disabled and Automatic Page 0 Read at power-up
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HY27SS561M | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
| HY27SSXXX | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
| HY27UA081G1M | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UA161G1M | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27UA1G1M | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
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