参数资料
型号: M295V002T-120XP1TR
厂商: 意法半导体
英文描述: 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
中文描述: 2兆位的256Kb × 8,启动座单电源闪存
文件页数: 1/29页
文件大小: 196K
代理商: M295V002T-120XP1TR
AI02078C
18
A0-A17
W
DQ0-DQ7
VCC
M29F002T
M29F002B
M29F002NT
E
VSS
8
G
(*) RPNC
Figure 1. LogicDiagram
M29F002T, M29F002NT
M29F002B
2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory
5V
±
10% SUPPLYVOLTAGEfor PROGRAM,
ERASE and READOPERATIONS
FASTACCESS TIME: 70ns
FASTPROGRAMMING TIME:10
μ
s typical
PROGRAM/ERASECONTROLLER (P/E.C.)
– ProgramByte-by-Byte
– StatusRegister bits
MEMORYBLOCKS
– BootBlock (Top or Bottomlocation)
– Parameterand Main blocks
BLOCK, MULTI-BLOCKand CHIPERASE
MULTI-BLOCKPROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program anotherBlockduring
Erase Suspend
LOW POWER CONSUMPTION
– Stand-byand AutomaticStand-by
100,000 PROGRAM/ERASECYCLES per
BLOCK
20 YEARSDATARETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– ManufacturerCode: 20h
– Device Code, M29F002T:B0h
– Device Code, M29F002NT:B0h
– Device Code, M29F002B:34h
DESCRIPTION
The M29F002 is a non-volatile memory that may
be erasedelectricallyat theblock or chipleveland
programmed in-system on a Byte-by-Byte basis
usingonlyasingle5VV
CC
supply.ForProgramand
Erase operationsthe necessaryhigh voltages are
generatedinternally. The device can also be pro-
grammed in standardprogrammers.
The arraymatrix organisationallows each blockto
be erased and reprogrammed without affecting
otherblocks. Blocks can be protectedagainst pro-
graming and erase on programming equipment,
and temporarily unprotected to make changes in
the application. Each block can be programmed
and erased over 100,000 cycles.
July 1998
1/29
PLCC32 (K)
32
1
PDIP32 (P)
TSOP32 (N)
8 x 20mm
Note:
* RPNC function is not available for the M29F002NT
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