参数资料
型号: M295V002T-120XP1TR
厂商: 意法半导体
英文描述: 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
中文描述: 2兆位的256Kb × 8,启动座单电源闪存
文件页数: 13/29页
文件大小: 196K
代理商: M295V002T-120XP1TR
Symbol
Alt
Parameter
TestCondition
M29F002T / M29F002NT / M29F002B
Unit
-70
-90
-120
V
CC
= 5V
±
10% V
CC
= 5V
±
10% V
CC
= 5V
±
10%
Standard
Interface
Standard
Interface
Standard
Interface
Min
Max
Min
Max
Min
Max
t
AVAV
t
RC
Address Valid to
Next Address Valid
E = V
IL
, G = V
IL
70
90
120
ns
t
AVQV
t
ACC
Address Valid to
Output Valid
E = V
IL
, G = V
IL
70
90
120
ns
t
ELQX(1)
t
LZ
Chip Enable Low to
Output Transition
G = V
IL
0
0
0
ns
t
ELQV(2)
t
CE
Chip Enable Low to
Output Valid
G = V
IL
70
90
120
ns
t
GLQX(1)
t
OLZ
Output EnableLow
to Output Transition
E = V
IL
0
0
0
ns
t
GLQV(2)
t
OE
Output EnableLow
to Output Valid
E = V
IL
30
35
50
ns
t
EHQX
t
OH
Chip Enable High to
Output Transition
G = V
IL
0
0
0
ns
t
EHQZ(1)
t
HZ
Chip Enable High to
Output Hi-Z
G = V
IL
20
20
30
ns
t
GHQX
t
OH
Output EnableHigh
to Output Transition
E = V
IL
0
0
0
ns
t
GHQZ(1)
t
DF
Output EnableHigh
to Output Hi-Z
E = V
IL
20
20
30
ns
t
AXQX
t
OH
Address Transition
to Output Transition
E = V
IL
, G = V
IL
0
0
0
ns
t
PLEL(1,3)
t
READY
RPNC Low to Read
Mode
10
10
10
μ
s
t
PHEL
t
RSP
RPNC High to Chip
Enable Low
50
50
50
ns
t
PLPX
t
RP
RPNC Pulse Width
500
500
500
ns
Notes:
1. Sampled only,not 100% tested.
2. G may be delayed by up to t
- t
afterthe falling edge of E withoutincreasing t
ELQV
.
3. Tobe considered only if the Reset pulse is given while the memory is in Erase mode.
Table14. ReadAC Characteristics
(T
A
= 0 to 70
°
C or –40 to85
°
C)
13/29
M29F002T, M29F002NT, M29F002B
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