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参数资料
| 型号： | M295V002T-120XP1TR |
| 厂商： | 意法半导体 |
| 英文描述： | 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory |
| 中文描述： | 2兆位的256Kb × 8，启动座单电源闪存 |
| 文件页数： | 11/29页 |
| 文件大小： | 196K |
| 代理商： | M295V002T-120XP1TR |
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AI01275B
3V
High Speed
0V
1.5V
2.4V
Standard
0.45V
2.0V
0.8V
Figure 4. AC TestingInput Output Waveform
AI01276B
1.3V
OUT
CL
CL= 30pF for High Speed
CL= 100pF for Standard
CLincludes JIG capacitance
3.3k
1N914
DEVICE
UNDER
TEST
Figure 5. AC Testing Load Circuit
Symbol
Parameter
TestCondition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
12
pF
Note:
1. Sampled only,not 100% tested.
Table12. Capacitance
(1)
(T
A
= 25
°
C, f = 1 MHz)
Auto Select (AS) Instruction.
This instruction
uses the two Coded cycles followed by one write
cyclegiving the command90h to address555h for
commandset-up.Asubsequentreadwilloutputthe
manufacturer code and the device code or the
block protection status dependingon the levels of
A0 and A1. The manufacturercode, 20h,is output
when the addresseslines A0 and A1 are Low,the
devicecodeis outputwhen A0isHigh withA1Low.
The AS instructionalso allows access to theblock
protectionstatus.AftergivingtheASinstruction,A0
is set to V
IL
with A1 at V
IH
, while A13-A17 define
the address of the block to be verified. A read in
these conditions will output a 01h if the block is
protectedand a 00h if the blockis not protected.
Program (PG) Instruction.
This instruction uses
four write cycles. The Program command A0h is
writtento address555h on thethirdcycleafter two
Codedcycles. Afourthwrite operationlatchesthe
Addresson thefallingedge of W orE and theData
to be written on the rising edge and starts the
P/E.C.Readoperationsoutputthe StatusRegister
bits after the programming has started. Memory
programmingis madeonlyby writing ’0’in placeof
’1’.StatusbitsDQ6andDQ7determineif program-
mingison-goingandDQ5allowsverificationof any
possible error. Programming at an address not in
blocks being erased is also possible during erase
suspend. In this case, DQ2 will toggle at the ad-
dressbeing programmed.
High Speed
Standard
Input Rise and Fall Times
≤
10ns
≤
10ns
Input Pulse Voltages
0 to 3V
0.45V to 2.4V
Input and Output Timing Ref. Voltages
1.5V
0.8V and 2V
Table11. ACMeasurementConditions
11/29
M29F002T, M29F002NT, M29F002B
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M295V002T-120XP6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory |
| M295V002T-70K1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory |
| M295V002T-70K6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory |
| M295V002T-70N1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory |
| M295V002T-70N6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory |
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