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| 型号： | MPC603RVG200LC |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 27/31页 |
| 文件大小： | 0K |
| 描述： | MPU RISC PID7V-603E 255FCCBGA |
| 标准包装： | 60 |
| 系列： | MPC6xx |
| 处理器类型： | 32-位 MPC603e PowerPC |
| 速度： | 200MHz |
| 电压： | 2.5V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 255-BCBGA 裸露焊盘，255-FCCBGA |
| 供应商设备封装： | 255-FCCBGA（21x21） |
| 包装： | 托盘 |
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PID7t-603e Hardware Specifications, Rev. 5
Freescale Semiconductor
5
Electrical and Thermal Characteristics
This table provides the recommended operating conditions for the PID7t-603e.
This table provides the package thermal characteristics for the PID7t-603e.
Table 2. Absolute Maximum Ratings
Characteristic
Symbol
Value
Unit
Core supply voltage
Vdd
–0.3 to 2.75
V
PLL supply voltage
AVdd
–0.3 to 2.75
V
I/O supply voltage
OVdd
–0.3 to 3.6
V
Input voltage
Vin
–0.3 to 5.5
V
Storage temperature range
Tstg
–55 to 150
°C
Note:
1. Functional and tested operating conditions are given in Table 3. Absolute maximum ratings are stress ratings only, and
functional operation at the maximums is not guaranteed. Stresses beyond those listed may affect device reliability or cause
permanent damage to the device.
2. Caution: Vin must not exceed OVdd by more than 2.5 V at any time, including during power-on reset.
3. Caution: OVdd must not exceed Vdd/AVdd by more than 1.2 V at any time, including during power-on reset.
4. Caution: Vdd/AVdd must not exceed OVdd by more than 0.4 V at any time, including during power-on reset.
Table 3. Recommended Operating Conditions
Characteristic
Symbol
Value
Unit
Core supply voltage
Vdd
2.375 to 2.625
V
PLL supply voltage
AVdd
2.375 to 2.625
V
I/O supply voltage
OVdd
3.135 to 3.465
V
Input voltage
Vin
GND to 5.5
V
Die-junction temperature
Tj
0 to 105
°C
Note: These are the recommended and tested operating conditions. Proper device operation outside of these conditions is not
guaranteed.
Table 4. Package Thermal Characteristics
Characteristic
Symbol
Value
CBGA
Value
PBGA
Rating
Package die junction-to-case thermal resistance (typical)
JC
0.095
8.0
°C/W
Package die junction-to-ball thermal resistance (typical)
JB
3.5
13
°C/W
Note: For more about thermal management, see Section 8, “System Design Information.”
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