参数资料
型号: MT46H128M32L4MA-54:A
元件分类: DRAM
英文描述: 128M X 32 DDR DRAM, 5 ns, PBGA168
封装: 12 X 12 MM, GREEN, PLASTIC, WFBGA-168
文件页数: 59/106页
文件大小: 3431K
State Diagram
Figure 23: Simplified State Diagram
Power
on
Power
applied
SREF
LMR
AREF
SREFX
ACT
CKEL
CKEH
PRE
PREALL
LMR
EMR
Deep
power-
down
Self
refresh
Idle:
all banks
precharged
Row
active
Burst
terminate
READING
Automatic sequence
Command sequence
WRITING
WRITE
WRITING
WRITE A
Precharging
Active
power-
down
Precharge
power-
down
Auto
refresh
PRE
WRITE A
READ A
PRE
READ A
READ
BST
DPD
DPDX
READ
SRR
READ
PRE
LMR
ACT = ACTIVE
DPDX = Exit deep power-down
READ A = READ w/ auto precharge
AREF = AUTO REFRESH
EMR = LOAD EXTENDED MODE REGISTER
SREF = Enter self refresh
BST = BURST TERMINATE
LMR = LOAD MODE REGISTER
SREFX = Exit self refresh
CKEH = Exit power-down
PRE = PRECHARGE
SRR = STATUS REGISTER READ
CKEL = Enter power-down
PREALL = PRECHARGE all banks
WRITE = WRITE w/o auto precharge
DPD = Enter deep power-down
READ = READ w/o auto precharge
WRITE A = WRITE w/ auto precharge
WRITE
WRITE A
2Gb: x16, x32 Mobile LPDDR SDRAM
State Diagram
PDF: 09005aef83a73286
2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN
56
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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