参数资料
型号: MT46H128M32L4MA-54:A
元件分类: DRAM
英文描述: 128M X 32 DDR DRAM, 5 ns, PBGA168
封装: 12 X 12 MM, GREEN, PLASTIC, WFBGA-168
文件页数: 90/106页
文件大小: 3431K
Figure 44: Consecutive WRITE-to-WRITE
CK
CK#
Command
WRITE1, 2
NOP
WRITE1, 2
NOP
Address
Bank,
Col b
NOP
Bank,
Col n
T0
T1
T2
T3
T2n
T4
T5
T4n
T3n
T1n
DQ3
DQS
DM
Don’t Care
Transitioning Data
tDQSS (NOM)
DIN
b+1
DIN
b+2
DIN
b+3
DIN
n
DIN
n+1
DIN
n+2
DIN
n+3
DIN
b
Notes: 1. Each WRITE command can be to any bank.
2. An uninterrupted burst of 4 is shown.
3. DINb (n) = data-in for column b (n).
Figure 45: Nonconsecutive WRITE-to-WRITE
CK
CK#
Command
WRITE1, 2
NOP
Address
Bank,
Col b
Bank,
Col n
T0
T1
T2
T3
T2n
T4
T5
T4n
T1n
T5n
DQ3
DQS
DM
tDQSS (NOM)
Don’t Care
Transitioning Data
DIN
b+1
DIN
b+2
DIN
b+3
DIN
b
DIN
n+1
DIN
n+2
DIN
n+3
WRITE1,2
DIN
n
Notes: 1. Each WRITE command can be to any bank.
2. An uninterrupted burst of 4 is shown.
3. DINb (n) = data-in for column b (n).
2Gb: x16, x32 Mobile LPDDR SDRAM
WRITE Operation
PDF: 09005aef83a73286
2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN
84
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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