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参数资料
| 型号： | MT48LC2M32LFFC |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | 512K x 32 x 4 banks 3.3v SDRAM(3.3V,512K x 32 x 4组同步动态RAM) |
| 中文描述： | 为512k × 32 × 4银行3.3V的内存电压（3.3V，512K采样× 32 × 4组同步动态RAM）的 |
| 文件页数： | 14/50页 |
| 文件大小： | 1054K |
| 代理商： | MT48LC2M32LFFC |
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14
64Mb: x32, 3.3V SDRAM
BatRam_3V.p65 – Rev. 0.7, Pub. 2/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc.
64Mb: x32, 3.3V
SDRAM
PRELIMINARY
three; data element
n
+ 3 is either the last of a burst of
four or the last desired of a longer burst. This 64Mb
SDRAM uses a pipelined architecture and therefore
does not require the 2
n
rule associated with a prefetch
architecture. A READ command can be initiated on any
clock cycle following a previous READ command. Full-
speed random read accesses can be performed to the
same bank, as shown in Figure 8, or each subsequent
READ may be performed to a different bank.
Figure 7
Consecutive READ Bursts
CLK
DQ
D
OUT
n
T2
T1
T4
T3
T5
T0
COMMAND
ADDRESS
READ
NOP
NOP
NOP
BANK,
COL
n
NOP
BANK,
COL
b
D
OUT
n
+ 1
D
OUT
n
+ 2
D
OUT
n
+ 3
D
OUT
b
READ
X
= 0 cycles
NOTE:
Each READ command may be to either bank. DQM is LOW.
CAS Latency = 1
CLK
DQ
D
OUT
n
T2
T1
T4
T3
T6
T5
T0
COMMAND
ADDRESS
READ
NOP
NOP
NOP
NOP
BANK,
COL
n
NOP
BANK,
COL
b
D
OUT
n
+ 1
D
OUT
n
+ 2
D
OUT
n
+ 3
D
OUT
b
READ
X
= 1 cycle
CAS Latency = 2
CLK
DQ
D
OUT
n
T2
T1
T4
T3
T6
T5
T0
COMMAND
ADDRESS
READ
NOP
NOP
NOP
NOP
BANK,
COL n
NOP
BANK,
COL
b
D
OUT
n
+ 1
D
OUT
n
+ 2
D
OUT
n
+ 3
D
OUT
b
READ
NOP
T7
X
= 2 cycles
CAS Latency = 3
DON’T CARE
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