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参数资料
| 型号： | MT49H16M16FM |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | REDUCED LATENCY DRAM RLDRAM |
| 中文描述： | 低延迟DRAM延迟DRAM |
| 文件页数： | 10/43页 |
| 文件大小： | 652K |
| 代理商： | MT49H16M16FM |
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10
256: x16, x32 RLDRAM
MT49H8M32_3.p65 – Rev. 3, Pub. 6/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
ADVANCE
256Mb: x16, x32
2.5V V
EXT
, 1.8V V
DD
, 1.8V V
DD
Q, RLDRAM
MODE REGISTER DESCRIPTION
The address signals A[17:0] are used to set the mode
register.
Mode Register Command Table
NOTE:
1. HSTL-complient current specification
2. Bits A17–A6 MUST be set LOW (Logic 0)
3. Default configuration
4. When Matched Mode is asserted, the automatic I/O impedance calibration is activated
5. Test Mode entry for vendor test mode only
6. The Mode Register Set default configuration corresponds to all address bits equal to zero
RLDRAM
Configuration
Test Mode
I/O Driver
Strength
Matched
Mode
Burst
Length
A17–A7
A6
A5
A4
A3
A2
A1
A0
Address
Mode Register
Commands
Reserved
2
0
1
Burst Length
2
3
4
A3
0
0
0
0
1
1
1
1
RLDRAM
Configuration
3
3
1
2
3
4
5
6
3
A2
0
0
1
1
0
0
1
1
A1
0
1
0
1
0
1
0
1
A0
0
1
Matched Mode
Inactive
3
Active
4
A4
0
1
Driver Strength
1
8mA
3
4mA
A5
0
1
Test Mode
Default Mode
3
Test Mode Entry
A6
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PDF描述 |
|---|---|
| MT49H8M32 | THERMISTOR PTC 100OHM 120DEG RAD |
| MT49H8M32FM | REDUCED LATENCY DRAM RLDRAM |
| MT4C1M16E5DJ-6 | EDO DRAM |
| MT4LC1M16E5DJ-6S | EDO DRAM |
| MT4LC1M16E5 | EDO DRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT49H16M16FM-33 ES | 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144PIN UBGA - Trays |
| MT49H16M16FM-33 TR | 制造商:Micron Technology Inc 功能描述:16MX16 RLDRAM PLASTIC FBGA 1.8V COMMON I/O 8 BANKS 1.8V I/O - Tape and Reel |
| MT49H16M16FM-4 | 制造商:Micron Technology Inc 功能描述: 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144FBGA - Trays |
| MT49H16M16FM-4 ES | 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144FBGA - Trays |
| MT49H16M16FM-5 | 制造商:Micron Technology Inc 功能描述: |
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