参数资料
型号: MT49H16M16FM
厂商: Micron Technology, Inc.
英文描述: REDUCED LATENCY DRAM RLDRAM
中文描述: 低延迟DRAM延迟DRAM
文件页数: 2/43页
文件大小: 652K
代理商: MT49H16M16FM
2
256: x16, x32 RLDRAM
MT49H8M32_3.p65 – Rev. 3, Pub. 6/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
ADVANCE
256Mb: x16, x32
2.5V V
EXT
, 1.8V V
DD
, 1.8V V
DD
Q, RLDRAM
NOTE:
1. When the BL4 setting is used, A18 is a “Don’t Care.”
FUNCTIONAL BLOCK DIAGRAM
8 Meg x 32
A0–A18, B0, B1, B2
Column Address
Buffer
Column Address
Counter
Refresh
Counter
Row Decoder
Memory Array
Bank 1
C
S
Row Address
Buffer
Row Decoder
Memory Array
Bank 0
C
S
Row Decoder
Memory Array
Bank 2
C
S
Row Decoder
Memory Array
Bank 3
C
S
Row Decoder
Memory Array
Bank 5
C
S
Row Decoder
Memory Array
Bank 4
C
S
Row Decoder
Memory Array
Bank 6
C
S
Row Decoder
Memory Array
Bank 7
C
C
C
A
W
C
R
D
D
V
R
S
Data Valid
DVLD
Data Read Strobe
DQS[3:0], DQS#[3:0]
Input Buffers
Output Buffers
Control Logic and Timing Generator
DQ0–DQ31
POWER-DOWN
Because the RLDRAM uses multiple power supply
voltage, the following sequence is required for power-
down.
Take all input signals to be V
SS
or High-Z
It is recommended to place Schottky diodes on the
board between the 2.5V and 1.8V power supplies.
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