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参数资料
| 型号： | MT49H16M16FM |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | REDUCED LATENCY DRAM RLDRAM |
| 中文描述： | 低延迟DRAM延迟DRAM |
| 文件页数： | 7/43页 |
| 文件大小： | 652K |
| 代理商： | MT49H16M16FM |
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7
256: x16, x32 RLDRAM
MT49H8M32_3.p65 – Rev. 3, Pub. 6/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
ADVANCE
256Mb: x16, x32
2.5V V
EXT
, 1.8V V
DD
, 1.8V V
DD
Q, RLDRAM
BALL DESCRIPTIONS (continued)
T-FBGA (x32)
4C, 4E, 4P,
4T, 9C, 9E,
9P, 9T
1A–E, 1P–V,
3H, 3L, 4A,
4H, 4L, 4V,
9A, 9H, 9L,
9V, 10H, 10L,
12B–E, 12P–U
4B, 4D, 4F,
4N, 4R, 4U,
9B, 9D, 9F,
9N, 9R, 9U
12N
T-FBGA (x16)
4C, 4E, 4P,
4T, 9C, 9E,
9P, 9T
1A–E, 1P–V,
3H, 3L, 4A,
4H, 4L, 4V,
9A, 9H, 9L,
9V, 10H, 10L,
12B–E, 12P–U
4B, 4D, 4F,
4N, 4R, 4U,
9B, 9D, 9F,
9N, 9R, 9U
2B–2F, 2N–2U,
3B–3F, 3N–3U
SYMBOL
V
DD
Q
TYPE
Supply
DESCRIPTION
Power Supply: Isolated Output Buffer Supply. Nominally
1.8V. See DC Electrical Characteristics and Operating
Conditions for range.
Power Supply: GND.
V
SS
Supply
V
SS
Q
Supply
Power Supply: Isolated Output Buffer Supply. GND.
NC
–
No Connect: These signals are not internally connected
and may be connected to ground to improve package
heat dissipation.
相关PDF资料 |
PDF描述 |
|---|---|
| MT49H8M32 | THERMISTOR PTC 100OHM 120DEG RAD |
| MT49H8M32FM | REDUCED LATENCY DRAM RLDRAM |
| MT4C1M16E5DJ-6 | EDO DRAM |
| MT4LC1M16E5DJ-6S | EDO DRAM |
| MT4LC1M16E5 | EDO DRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT49H16M16FM-33 ES | 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144PIN UBGA - Trays |
| MT49H16M16FM-33 TR | 制造商:Micron Technology Inc 功能描述:16MX16 RLDRAM PLASTIC FBGA 1.8V COMMON I/O 8 BANKS 1.8V I/O - Tape and Reel |
| MT49H16M16FM-4 | 制造商:Micron Technology Inc 功能描述: 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144FBGA - Trays |
| MT49H16M16FM-4 ES | 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144FBGA - Trays |
| MT49H16M16FM-5 | 制造商:Micron Technology Inc 功能描述: |
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