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参数资料
| 型号： | MT49H16M16FM |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | REDUCED LATENCY DRAM RLDRAM |
| 中文描述： | 低延迟DRAM延迟DRAM |
| 文件页数： | 18/43页 |
| 文件大小： | 652K |
| 代理商： | MT49H16M16FM |
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18
256: x16, x32 RLDRAM
MT49H8M32_3.p65 – Rev. 3, Pub. 6/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
ADVANCE
256Mb: x16, x32
2.5V V
EXT
, 1.8V V
DD
, 1.8V V
DD
Q, RLDRAM
ABSOLUTE MAXIMUM RATINGS*
Storage Temperature .............................. -55°C to +150°C
I/O Voltage ................................... -0.3V to + V
DD
Q + 0.3V
Voltage on V
EXT
Supply Relative to V
SS
...-0.3V to +2.8V
Voltage on V
DD
Supply Relative to V
SS
.....-0.3V to +2.1V
Voltage on V
DD
Q Supply Relative to V
SS
..-0.3V to +2.1V
Junction Temperature** ............................................ 100°C
RECOMMENDED DC OPERATION
RANGES
All values are recommended operating conditions un-
less otherwise noted. External on board (PCB) capaci-
tance values are required as follows:
V
DDQ
:2 x 0.1μF/device
V
DD
:2 x 0.1μF/device
V
REF
:0.1μF/device
V
EXT
:0.1μF/device
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(+20°C
￡
T
J
￡
+110°C; +1.75V
￡
V
DD
￡
+1.85V unless otherwise noted)
DESCRIPTION
Supply Voltage
Supply Voltage
Isolated Output Buffer Supply
Reference Voltage
SYMBOL
V
EXT
V
DD
V
DD
Q
V
REF
MIN
2.38
1.75
1.7
MAX
2.63
1.85
1.9
UNITS NOTES
V
V
V
V
1
1,
1, 4
1, 2, 3
0.95
x
V
DD
Q/2 1.05 x V
DD
Q/2
NOTE:
1. All voltages referenced to V
SS
(GND).
2. Typically the value of V
REF
is expect to be 0.5x V
DD
Q of the transmitting device. V
REF
is expected to track variations in
V
DD
Q.
3. Peak to peak AC noise on V
REF
must not exceed 2% V
REF
(
DC
).
4. During normal operation, V
DD
Q must not exceed V
DD
.
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional opera-
tion of the device at these or any other conditions above
those indicated in the operational sections of this speci-
fication is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliabil-
ity.
**Junction temperature depends upon package type,
cycle time, loading, ambient temperature, and airflow.
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相关代理商/技术参数 |
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| MT49H16M16FM-33 ES | 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144PIN UBGA - Trays |
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| MT49H16M16FM-4 | 制造商:Micron Technology Inc 功能描述: 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144FBGA - Trays |
| MT49H16M16FM-4 ES | 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144FBGA - Trays |
| MT49H16M16FM-5 | 制造商:Micron Technology Inc 功能描述: |
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