参数资料
型号: RFPIC12F675K-E/SS
元件分类: 微控制器/微处理器
英文描述: 8-BIT, FLASH, 20 MHz, RISC MICROCONTROLLER, PDSO20
封装: 0.209 INCH, PLASTIC, MO-150, SSOP-20
文件页数: 120/123页
文件大小: 5438K
代理商: RFPIC12F675K-E/SS
rfPIC12F675
DS70091A-page 94
Preliminary
2003 Microchip Technology Inc.
13.5
DC Characteristics: rf
PIC12F675-E (Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40
°C ≤ TA ≤ +125°C for extended
Param
No.
Device Characteristics
Min
Typ
Max
Units
Conditions
V
DD
Note
D020E
Power-down Current
(I
PD)(3)
0.0011
3.5
A
2.0
WDT, BOD, Comparators, V
REF, and
T1OSC disabled
0.0012
4.0
A
3.0
0.0022
8.0
A
5.0
D021E
0.3
6.0
A
2.0
WDT Current(1)
1.8
9.0
A
3.0
8.4
20
A
5.0
D022E
58
70
A
3.0
BOD Current(1)
109
130
A
5.0
D023E
3.3
10
A
2.0
Comparator Current(1)
6.1
13
A
3.0
11.5
24
A
5.0
D024E
58
70
A
2.0
CV
REF Current(1)
85
100
A
3.0
138
165
A
5.0
D025E
4.0
10
A
2.0
T1 O
SC Current(1)
4.6
12
A
3.0
6.0
20
A
5.0
D026E
0.0012
6.0
A
3.0
A/D Current(1)
0.0022
8.5
A
5.0
D027E
Power-down RF Current
(I
PDRF)(3)
0.050
TBD
A
3.0
RF Transmitter, RFEN=V
SSRF
Data in ‘Typ’ column is at 5.0V, 25
°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: The peripheral current is the sum of the base I
DD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral
current can be determined by subtracting the base IDD or IPD current
from this limit. Max values should be used when calculating total current consumption.
2: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD.
3: Total device current is the sum of I
PD from VDD and IPDRF from VDDRF.
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