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参数资料
| 型号： | S29JL032J70TFI213 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 2M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封装： | LEAD FREE, MO-142(D)DD, TSOP-48 |
| 文件页数： | 23/63页 |
| 文件大小： | 1618K |
| 代理商： | S29JL032J70TFI213 |
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Publication Number S29JL032J_00
Revision 05
Issue Date August 24, 2011
Distinctive Characteristics
Architectural Advantages
Simultaneous Read/Write operations
– Data can be continuously read from one bank while executing
erase/program functions in another bank.
– Zero latency between read and write operations
Multiple bank architecture
– Four bank architectures available (refer to Table 8.2 on page 17).
Boot sectors
– Top or bottom boot sector configurations available
– Any combination of sectors can be erased
Manufactured on 0.11 m Process Technology
Secured Silicon Region: Extra 256 byte sector
– Factory locked and identifiable: 16 bytes available for secure,
random factory Electronic Serial Number; verifiable as factory
locked through autoselect function
– Customer lockable: One-time programmable only. Once locked,
data cannot be changed
Zero power operation
– Sophisticated power management circuits reduce power consumed
during inactive periods to nearly zero.
Compatible with JEDEC standards
– Pinout and software compatible with single-power-supply flash
standard
Package Options
48-ball Fine-pitch BGA
48-pin TSOP
Performance Characteristics
High performance
– Access time as fast as 60 ns
– Program time: 6 s/word typical using accelerated programming
function
Ultra low power consumption (typical values)
– 2 mA active read current at 1 MHz
– 10 mA active read current at 5 MHz
– 200 nA in standby or automatic sleep mode
Cycling endurance: 1 million cycles per sector typical
Data retention: 20 years typical
Software Features
Supports Common Flash Memory Interface (CFI)
Erase suspend/Erase resume
– Suspends erase operations to read data from, or program data to, a
sector that is not being erased, then resumes the erase operation.
Data# polling and toggle bits
– Provides a software method of detecting the status of program or
erase operations
Unlock bypass program command
– Reduces overall programming time when issuing multiple program
command sequences
Hardware Features
Ready/Busy# output (RY/BY#)
– Hardware method for detecting program or erase cycle completion
Hardware reset pin (RESET#)
– Hardware method of resetting the internal state machine to the read
mode
WP#/ACC input pin
– Write protect (WP#) function protects the two outermost boot
sectors regardless of sector protect status
– Acceleration (ACC) function accelerates program timing
Sector protection
– Hardware method to prevent any program or erase operation within
a sector
– Temporary Sector Unprotect allows changing data in protected
sectors in-system
General Description
The S29JL032J is a 32 Mbit, 3.0 volt-only flash memory device, organized as 2,097,152 words of 16 bits each or 4,194,304
bytes of 8 bits each. Word mode data appears on DQ15–DQ0; byte mode data appears on DQ7–DQ0. The device is designed
to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM
programmers. The device is available with an access time of 60, or 70 ns and is offered in a 48-ball FBGA or a 48-pin TSOP
package. Standard control pins—chip enable (CE#), write enable (WE#), and output enable (OE#)—control normal read and
write operations, and avoid bus contention issues. The device requires only a single 3.0 volt power supply for both read and
write functions. Internally generated and regulated voltages are provided for the program and erase operations.
S29JL032J
32 Megabit (4M x 8-Bit/2M x 16-Bit)
CMOS 3.0 Volt-Only, Simultaneous Read/Write
Flash Memory
Data Sheet
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S29JL032J70TFI220 | 功能描述:闪存 32MB 闪存 3.0V 70ns Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| S29JL032J70TFI310 | 功能描述:闪存 32MB 闪存 3.0V 70ns Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| S29JL032J70TFI313 | 制造商:Spansion 功能描述: |
| S29JL032J70TFI320 | 功能描述:闪存 32Mb 3V 70ns Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| S29JL032J70TFI323 | 功能描述:闪存 32M, 3V, 70ns Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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