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参数资料
| 型号： | S29JL032J70TFI213 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 2M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封装： | LEAD FREE, MO-142(D)DD, TSOP-48 |
| 文件页数： | 8/63页 |
| 文件大小： | 1618K |
| 代理商： | S29JL032J70TFI213 |
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16
S29JL032J
S29JL032J_00_05 August 24, 2011
Data
She e t
8.4
Simultaneous Read/Write Operations with Zero Latency
This device is capable of reading data from one bank of memory while programming or erasing in another
bank of memory. An erase operation may also be suspended to read from or program to another location
within the same bank (except the sector being erased). Figure 17.8 on page 53 shows how read and write
cycles may be initiated for simultaneous operation with zero latency. ICC6 and ICC7 in DC Characteristics
on page 45 represent the current specifications for read-while-program and read-while-erase, respectively.
8.5
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state,
independent of the OE# input.
The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VCC ± 0.3V.
Note that this is a more restricted voltage range than VIH. If CE# and RESET# are held at VIH, but not within
VCC ± 0.3V, the device will be in the standby mode, but the standby current will be greater. The device
requires standard access time (tCE) for read access when the device is in either of these standby modes,
before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the operation
is completed.
8.6
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the
CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are
Characteristics on page 45 represents the automatic sleep mode current specification.
8.7
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the
RESET# pin is driven low for at least a period of tRP, the device immediately terminates any operation in
progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET# pulse.
The device also resets the internal state machine to reading array data. The operation that was interrupted
should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS±0.3V, the device
draws CMOS standby current (ICC4). If RESET# is held at VIL but not within VSS±0.3V, the standby current
will be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firmware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The
system can thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is
asserted when a program or erase operation is not executing (RY/BY# pin is “1”), the reset operation is
completed within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the
RESET# pin returns to VIH.
Refer to Hardware Reset (RESET#) on page 49 for RESET# parameters and to Figure 17.2 on page 49 for
the timing diagram.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S29JL032J70TFI220 | 功能描述:闪存 32MB 闪存 3.0V 70ns Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| S29JL032J70TFI310 | 功能描述:闪存 32MB 闪存 3.0V 70ns Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| S29JL032J70TFI313 | 制造商:Spansion 功能描述: |
| S29JL032J70TFI320 | 功能描述:闪存 32Mb 3V 70ns Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| S29JL032J70TFI323 | 功能描述:闪存 32M, 3V, 70ns Parallel NOR 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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