参数资料
型号: ST52510F3M6
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: MICROCONTROLLER, PDSO20
封装: SOP-20
文件页数: 19/136页
文件大小: 3335K
代理商: ST52510F3M6
Obsolete
Product(s)
- Obsolete
Product(s)
16.7 Memory Characteristics
Operating Conditions: VDD=2.8 V to 5.5 V, TA=-40
° to 85° C, unless otherwise specified.
Notes:
1. Minimum VDD supply voltage that avoids the loosing of data stored into RAM or into hardware registers.
Below the specified threshold the device is turned off and it is turned on only after the VDD goes above
the POR threshold, as consequence the device is reset by the POR and the RAM is put to all 0. Guar-
anteed by design, not tested in production.
2. Flash/EEPROM can be programmed at single byte or at 32 bytes blocks. In working mode (In Applica-
tion Programming) the time includes the erase operation before the writing.
3. The data retention time increases when the TA decreases.
4. Not tested in production, guaranteed by design.
Table 16.10 RAM and Registers
Symbol
Parameter
Conditions
Min.
Typ.
Max
Unit
VRM
Data retention mode1)
PLVD disabled
VDDmin
V
Table 16.11 Flash Program/Data Memory
Symbol
Parameter
Conditions
Min.
Typ.
Max
Unit
tprog
Programming time for 1/32 bytes2)
VDD = 2.8 V - 5.5 V
Virgin Flash
ISP mode
2.5
ms
Programming time for 1/32 bytes2)
VDD = 2.8 V - 5.5 V
Not Virgin Flash
IAP mode
5
Programming time for 8 Kbytes
VDD = 2.8 V - 5.5 V
Fast Programming Mode
ISP mode
640
tRET
Data retention 3)
TA=55
° C
10
years
NRW
Write/erase cycles
TA=25
° C
300000
cycle
Table 16.12 EEPROM Data Memory
Symbol
Parameter
Conditions
Min.
Typ.
Max
Unit
tprog
Programming time for 1/32 bytes2)
TA=25
° C
5ms
tRET
Data retention 3)
TA=55
° C
10
years
NRW
Write/erase cycles
TA=25
° C
300000
cycle
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