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参数资料
| 型号： | ZL30402/QCG1 |
| 厂商： | ZARLINK SEMICONDUCTOR INC |
| 元件分类： | 数字传输电路 |
| 英文描述： | ATM/SONET/SDH SUPPORT CIRCUIT, PQFP80 |
| 封装： | 14 X 14 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026BEC, LQFP-80 |
| 文件页数： | 27/44页 |
| 文件大小： | 472K |
| 代理商： | ZL30402/QCG1 |
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ZL30402
Data Sheet
33
Zarlink Semiconductor Inc.
* Voltages are with respect to ground (GND) unless otherwise stated
Note 1:
VOS is defined as (VOH + VOL) / 2
Note 2:
Rise and fall times are measured at 20% and 80% levels.
* Voltages are with respect to ground (GND) unless otherwise stated
* Supply voltage and operating temperature are as per Recommended Operating Conditions
* Timing for input and output signals is based on the worst case conditions (over TA and VDD)
Figure 11 - Timing Parameters Measurement Voltage Levels
DC Electrical Characteristics*
Characteristics
Symbol
Min.
Max.
Units
Notes
1
Supply current with C20i = 20 MHz
IDD
135
mA
Outputs unloaded
2
Supply current with C20i = 0V
IDDS
2.2
mA
Outputs unloaded
3
CMOS high-level input voltage
VCIH
0.7VDD
V
4
CMOS low-level input voltage
VCIL
0.3VDD
V
5
Input leakage current
IIL
15
AVI=VDD or GND
6
High-level output voltage
VOH
2.4
V
IOH=10 mA
7
Low-level output voltage
VOL
0.4
V
IOL=10 mA
8
LVDS: Differential output voltage
VOD
250
450
mV
ZT=100
9
LVDS: Change in VOD between
complementary output states
dVOD
50
mV
ZT=100
10
LVDS: Offset voltage
VOS
1.125
1.375
V
Note 1
11
LVDS: Change in VOS between
complementary output states
dVOS
50
mV
12
LVDS: Output short circuit current
IOS
24
mA
Pin short to GND
13
LVDS: Output rise and fall times
TRF
260
900
ps
Note 2
AC Electrical Characteristics - Timing Parameter Measurement - CMOS Voltage Levels*
Characteristics
Symbol
Level
Units
1
Threshold voltage
VT
0.5VDD
V
2
Rise and fall threshold voltage High
VHM
0.7VDD
V
3
Rise and fall threshold voltage Low
VLM
0.3VDD
V
ALL SIGNALS
Timing Reference Points
VHM
VT
VLM
tIF, tOF
tIR, tOR
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