参数资料
型号: ZL6100EVAL2Z
厂商: Intersil
文件页数: 19/34页
文件大小: 0K
描述: EVAL BOARD 2CH USB ZL6100
标准包装: 1
系列: *
ZL6100
Next, calculate the switching time using Equation 22:
frequency on the inductance when determining the minimum
t SW =
Q g
I gdr
(EQ. 22)
value of L . Use the typical value for DCR.
The value of R 1 should be as small as feasible and no
greater than 5k Ω for best signal-to-noise ratio. The designer
P swtop = V INM × t sw × I OUT × f sw
P QHtot = P QH + P swtop
D ( V IN ? max ? V OUT ) + ( 1 ? D ) ? V OUT
R 1 ? min =
T j max = T pcb + ( P Q × R th )
C L ? max =
L
R 1 ? C L ? DCR ? ?
ε τ = ? ? 1 ?
?
where Q g is the gate charge of the selected QH and I gdr is
the peak gate drive current available from the ZL6100.
Although the ZL6100 has a typical gate drive current of 3A,
use the minimum guaranteed current of 2A for a
conservative design. Using the calculated switching time,
calculate the switching power loss in QH using Equation 23:
(EQ. 23)
The total power dissipated by QH is given by Equation 24:
(EQ. 24)
MOSFET THERMAL CHECK
Once the power dissipations for QH and QL have been
calculated, the MOSFETs junction temperature can be
estimated. Using the junction-to-case thermal resistance
(R th ) given in the MOSFET manufacturer ’s datasheet and
the expected maximum printed circuit board temperature,
calculate the junction temperature as shown in Equation 25:
(EQ. 25)
CURRENT SENSING COMPONENTS
Once the current sense method has been selected (See
components are selected as follows.
When using the inductor DCR sensing method, the user
must also select an R/C network comprised of R1 and CL
(see Figure 14).
V IN
should make sure the resistor package size is appropriate
for the power dissipated and include this loss in efficiency
calculations. In calculating the minimum value of R 1 , the
average voltage across C L (which is the average I OUT . DCR
product) is small and can be neglected. Therefore, the
minimum value of R 1 may be approximated by using
Equation 27:
2 2
(EQ. 27)
P R 1 pkg ? max ? δ P
where P R1pkg-max is the maximum power dissipation
specification for the resistor package and δ P is the derating
factor for the same parameter (eg.: PR1pkg-max = 0.0625W
for 0603 package, δ P = 50% @ +85°C). Once R 1-min has
been calculated, solve for the maximum value of CL from
using Equation 28:
(EQ. 28)
R 1 ? min ? DCR
and choose the next-lowest readily available value (eg.: For
C L - max = 1.86μF, C L = 1.5μF is a good choice). Then
substitute the chosen value into the same equation and
recalculate the value of R 1 . Choose the 1% resistor standard
value closest to this re-calculated value of R 1 . The error due
to the mismatch of the two time constants is shown in
Equation 29:
?
? 100 % (EQ. 29)
? L avg ?
The value of R 2 should be simply five times that of R 1 :
R 2 = 5 ? R 1
ZL6100
GH
SW
GL
R1
CL
V OUT
(EQ. 30)
For the r DS(ON) current sensing method, the external low
side MOSFET will act as the sensing element as indicated in
ISENA
R2
Figure 16.
ISENB
FIGURE 14. DCR CURRENT SENSING
For the voltage across C L to reflect the voltage across the
DCR of the inductor, the time constant of the inductor must
match the time constant of the RC network (see
Equation 26).
Current Limit Threshold Selection
It is recommended that the user include a current limiting
mechanism in their design to protect the power supply from
damage and prevent excessive current from being drawn
from the input supply in the event that the output is shorted
to ground or an overload condition is imposed on the output.
R 1 ? C L =
τ RC = τ L / DCR
L
DCR
(EQ. 26)
Current limiting is accomplished by sensing the current
through the circuit during a portion of the duty cycle.
Output current sensing can be accomplished by measuring
the voltage across a series resistive sensing element
For L , use the average of the nominal value and the minimum
according to Equation 31:
value. Include the effects of tolerance, DC Bias and switching
19
V LIM = I LIM × R SENSE
(EQ. 31)
FN6876.3
August 29, 2012
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