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参数资料
| 型号： | MT46V4M32 |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | DOUBLE DATA RATE DDR SDRAM |
| 中文描述： | 双倍数据速率的DDR SDRAM内存 |
| 文件页数： | 40/66页 |
| 文件大小： | 1921K |
| 代理商： | MT46V4M32 |
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40
128Mb: x32 DDR SDRAM
4M32DDR_B.p65 – Rev. B, Pub. 7/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
128Mb: x32
DDR SDRAM
ADVANCE
NOTE (continued):
3. Current state definitions:
Idle: The bank has been precharged, and
t
RP has been met.
Row Active: A row in the bank has been activated, and
t
RCD has been met. No data bursts/accesses
and no register accesses are in progress.
Read: A READ burst has been initiated, with auto precharge disabled, and has not yet
terminated or been terminated.
Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet
terminated or been terminated.
Read with Auto
Precharge Enabled: See following text
Write with Auto
Precharge Enabled: See following text
3a. The read with auto precharge enabled or WRITE with auto precharge enabled states can each be broken
into two parts: the access period and the precharge period. For read with auto precharge, the precharge
period is defined as if the same burst was executed with auto precharge disabled and then followed with
the earliest possible PRECHARGE command that still accesses all of the data in the burst. For write with
auto precharge, the precharge period begins when tWR ends,with tWR measured as if auto precharge
was disabled. The access period starts with registration of the command and ends where the precharge
period (or tRP) begins.
This device supports concurrent auto precharge such that when a read with auto precharge is enabled
or a write with auto precharge is enabled any command to other banks is allowed, as long as that
command does not interrupt the read or write data transfer already in process. In either case, all other
related limitations apply (e.g., contention between read data and write data must be avoided).
3b. The minimum delay from a READ or WRITE command with auto precharge enabled, to a com-
mand to a different bank is summarized below.
From Command
WRITE w/AP
To Command
READ or READ w/AP
WRITE or WRITE w/AP
PRECHARGE
ACTIVE
READ or READ w/AP
WRITE or WRITE w/AP
PRECHARGE
ACTIVE
Minimum delay (with concurrent auto precharge)
[1 + (BL/2)]
t
CK +
t
WTR
(BL/2) tCK
1
t
CK
1
t
CK
(BL/2) *
t
CK
[CL
RU
+ (BL/2)]
t
CK
1
t
CK
1
t
CK
READ w/AP
CL
= CAS Latency (CL) rounded up to the next integer
BL = Bust Length
4. AUTO REFRESH and LOAD MODE REGISTER commands may only be issued when all banks are idle.
5. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by
the current state only.
6. All states and sequences not shown are illegal or reserved.
7. READs or WRITEs listed in the Command/Action column include READs or WRITEs with auto precharge
enabled and READs or WRITEs with auto precharge disabled.
8. Requires appropriate DM masking.
9. A WRITE command may be applied after the completion of the READ burst; otherwise, a BURST TERMI-
NATE must be used to end the READ burst prior to asserting a WRITE command.
相关PDF资料 |
PDF描述 |
|---|---|
| MT46V4M32LG | I.MX31 LITE KIT |
| MT46V64M4 | 16 Meg x 4 x 4 banks DDR SDRAM(16M x 4 x 4组,双数据速率同步动态RAM) |
| MT46V64M8 | 16 Meg x 8 x 4 banks DDR SDRAM(16M x 8 x 4组,双数据速率同步动态RAM) |
| MT48LC16M8A1TG | SYNCHRONOUS DRAM |
| MT48LC32M4A1 | ECONOLINE: RSZ/P - 1kVDC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT46V4M32LG | 制造商:MICRON 制造商全称:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM |
| MT46V64M16 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:DOUBLE DATA RATE (DDR) SDRAM |
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