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参数资料
| 型号： | MT46V4M32 |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | DOUBLE DATA RATE DDR SDRAM |
| 中文描述： | 双倍数据速率的DDR SDRAM内存 |
| 文件页数： | 48/66页 |
| 文件大小： | 1921K |
| 代理商： | MT46V4M32 |
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48
128Mb: x32 DDR SDRAM
4M32DDR_B.p65 – Rev. B, Pub. 7/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
128Mb: x32
DDR SDRAM
ADVANCE
NOTES (continued)
35. READs and WRITEs with autoprecharge are not
allowed to be issued until
t
RAS (MIN) can be
satisfied prior to the internal precharge com-
mand being issued.
36. Impedance Matched Drive Curves:
a)The full variation in driver pull-down current
from minimum to maximum process, tempera-
ture and voltage will lie within the outer
bounding lines of the V-I curve of Figures A
b)The variation in driver pull-down current
within nominal limits of voltage and tempera-
ture is expected, but not guaranteed, to lie
within the inner bounding lines of the V-I
curve of Figures A .
c) The full variation in driver pull-up current from
minimum to maximum process, temperature
and voltage will lie within the outer bounding
lines of the V-I curve of Figures B.
d)The variation in driver pull-up current within
nominal limits of voltage and temperature is
expected, but not guaranteed, to lie within
the inner bounding lines of the V-I curve of
Figures B.
e)The full variation in the ratio of the maximum
to minimum pull-up and pull-down current
will not exceed 1.7, for device drain-to-source
voltages from 0 to V
DD
Q/2.
f) The full variation in the ratio of the nominal
pull-up to pull-down current should be unity
±30%, for device drain-to-source voltages from
0 to V
DD
Q/2.
37. Reduced Output Drive Curves:
a)The full variation in driver pull-down current
from minimum to maximum process, tempera-
ture and voltage will lie within the outer
bounding lines of the V-I curve of Figures C
and D.
b)The variation in driver pull-down current
within nominal limits of voltage and tempera-
ture is expected, but not guaranteed, to lie within
the inner bounding lines of the V-I curve of
Figures C and D.
c) The full variation in driver pull-up current from
minimum to maximum process, temperature
and voltage will lie within the outer bounding
lines of the V-I curve of Figures C and D.
Figure B
Pull-Up Characteristics
Figure A
Pull-Down Characteristics
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Vout (V)
I
Max
Min
Nominal Low
Nominal High
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Vout (V)
I
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
Max
Min
Nominal Low
Nominal High
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PDF描述 |
|---|---|
| MT46V4M32LG | I.MX31 LITE KIT |
| MT46V64M4 | 16 Meg x 4 x 4 banks DDR SDRAM(16M x 4 x 4组,双数据速率同步动态RAM) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT46V4M32LG | 制造商:MICRON 制造商全称:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM |
| MT46V64M16 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:DOUBLE DATA RATE (DDR) SDRAM |
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