收藏本站
参数资料
型号： MT46V4M32
厂商： Micron Technology, Inc.
英文描述： DOUBLE DATA RATE DDR SDRAM
中文描述： 双倍数据速率的DDR SDRAM内存
文件页数： 41/66页
文件大小： 1921K
代理商： MT46V4M32
41
128Mb: x32 DDR SDRAM
4M32DDR_B.p65 – Rev. B, Pub. 7/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
128Mb: x32
DDR SDRAM
ADVANCE
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
DD
Supply
Relative to V
SS
............................................-1V to +3.6V
Voltage on V
DD
Q Supply
Relative to V
SS
............................................-1V to +3.6V
Voltage on V
REF
and Inputs
Relative to V
SS
............................................-1V to +3.6V
Voltage on I/O Pins
Relative to V
SS
...............................-0.5V to V
DD
Q +0.5V
Operating Temperature, T
A
(ambient) ...0°C to +70°C
Storage Temperature (plastic) ............-55°C to +150°C
Power Dissipation ........................................................ 2W
Short Circuit Output Current................................. 50mA
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
AC INPUT OPERATING CONDITIONS
(Notes: 1-5, 14, 16, 40; notes appear on pages 46-49) (0°C
≤
T
A
≤
+70°C; V
DD
= +2.5V ±0.125V, V
DD
Q = +2.5V ±0.125V)
PARAMETER/CONDITION
Input High (Logic 1) Voltage; DQ
Input Low (Logic 0) Voltage; DQ
Clock Input Differential Voltage; CK and CK#
Clock Input Crossing Point Voltage; CK and CK#
SYMBOL
V
IH
(
AC
)
V
IL
(
AC
)
V
ID
(
AC
)
V
IX
(
AC
)
MIN
MAX
–
UNITS
V
V
V
V
NOTES
14, 28, 39
14, 28, 39
8
9
V
REF
+ 0.310
–
0.7
0.5xV
DD
Q-0.2
V
REF
- 0.310
V
DD
Q + 0.6
0.5xV
DD
Q+0.2
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1-5, 16, 40; notes appear on pages 46-49) (0°C
≤
T
A
≤
+70°C; V
DD
= +2.5V ±0.125V, V
DD
Q = +2.5V ±0.125V)
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Clock Input Voltage Level; CK and CK#
Clock Input Differential Voltage; CK and CK#
Clock Input Crossing Point Voltage; CK and CK#
INPUT LEAKAGE CURRENT
Any input 0V
≤
V
IN
≤
V
DD
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQs are disabled; 0V
≤
V
OUT
≤
V
DD
Q)
OUTPUT LEVELS: Impedance Match
High Current (V
OUT
= V
DD
Q-0.373V, minimum V
REF
, minimum V
TT
)
Low Current (V
OUT
= 0.373V, maximum V
REF
,maximum V
TT
)
OUTPUT LEVELS: Reduced drive option -
High Current (V
OUT
= V
DD
Q-0.763V, minimum V
REF
, minimum V
TT
)
Low Current (V
OUT
= 0.763V, maximum V
REF
,maximum V
TT
)
SYMBOL
V
DD
V
DD
Q
V
REF
V
TT
V
IH
(
DC
)
V
IL
(
DC
)
V
IN
V
ID
V
IX
MIN
2.375
2.375
MAX
2.625
2.625
UNITS NOTES
V
V
V
V
V
V
V
V
V
40
6
7
28
28
0.49
x
V
DD
Q
V
REF
- 0.04
V
REF
+ 0.15
-0.3
-0.3
0.36
1.15
0.51
x
V
DD
Q
V
REF
+ 0.04
V
DD
+ 0.3
V
REF
- 0.15
V
DD
Q + 0.3
V
DD
Q + 0.6
1.35
8
9
I
I
-2
2
μA
I
OZ
-5
5
μA
I
OH
I
OL
-4
4
–
–
mA
mA
37, 39
I
OHR
I
OLR
-9
9
–
–
mA
mA
38, 39
相关PDF资料
PDF描述
MT46V4M32LG I.MX31 LITE KIT
MT46V64M4 16 Meg x 4 x 4 banks DDR SDRAM(16M x 4 x 4组,双数据速率同步动态RAM)
MT46V64M8 16 Meg x 8 x 4 banks DDR SDRAM(16M x 8 x 4组,双数据速率同步动态RAM)
MT48LC16M8A1TG SYNCHRONOUS DRAM
MT48LC32M4A1 ECONOLINE: RSZ/P - 1kVDC
相关代理商/技术参数
参数描述
MT46V4M32LG 制造商:MICRON 制造商全称:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM
MT46V64M16 制造商:MICRON 制造商全称:Micron Technology 功能描述:DOUBLE DATA RATE (DDR) SDRAM
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*