参数资料
型号: MT46V4M32
厂商: Micron Technology, Inc.
英文描述: DOUBLE DATA RATE DDR SDRAM
中文描述: 双倍数据速率的DDR SDRAM内存
文件页数: 56/66页
文件大小: 1921K
代理商: MT46V4M32
56
128Mb: x32 DDR SDRAM
4M32DDR_B.p65 – Rev. B, Pub. 7/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
128Mb: x32
DDR SDRAM
ADVANCE
TIMING PARAMETERS
-33
-4
-5
SYMBOL
t
CH
t
CL
t
CK (5)
t
CK (4)
t
CK (3)
MIN
0.45
0.45
3
4
-
MAX
0.55
0.55
8
8
-
MIN
0.45
0.45
-
4
5
MAX
0.55
0.55
MIN
0.45
0.45
-
-
5
MAX
0.55
0.55
-
-
8
UNITS
t
CK
t
CK
ns
ns
ns
8
8
INITIALIZE AND LOAD MODE REGISTERS
-33
-4
-5
SYMBOL
t
IH
t
IS
t
MRD
t
RFC
t
RP
t
VTD
MIN
0.9
0.9
2
62
16
0
MAX
MIN
0.9
0.9
2
62
16
0
MAX
MIN
0.9
0.9
2
62
20
0
MAX
UNITS
ns
ns
t
CK
ns
ns
ns
CKE
LVCMOS
LOW LEVEL
DQ
BA0, BA1
200 cycles of CK
3
Load Extended
Mode Register
Load Mode
Register
2
t
MRD
t
MRD
t
RP
t
RFC
t
RFC
5
t
IS
Power-up:
V
DD
and
CK stable
T = 200 s
t
RP
High-Z
t
IH
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DQS
High-Z
A0-A7, A9-A11
RA
A8
RA
ALL BANKS
CK
CK#
t
CH
t
CL
t
CK
V
TT
1
tVTD
V
REF
V
DD
V
DD
Q
COMMAND
66
6
LMR
NOP
PRE
LMR
AR
AR
ACT
5
t
IS
t
IH
BA1 = L
tIS
tIH
t
IS
t
IH
BA1 = L
tIS
tIH
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CODE
CODE
tIS
tIH
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CODE
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PRE
ALL BANKS
tIS
tIH
NOTE:
1. V
TT
is not applied directly to the device; however, tVTD must be greater than or equal to zero to avoid device latch-up.
2. Although not required by the Micron device, JEDEC specifies resetting the DLL with A8 = H.
3. tMRD is required before any command can be applied, and 200 cycles of CK are required before a READ command can be issued.
4. The two AUTO REFRESH commands at Tc0 and Td0 may be applied after the LOAD MODE REGISTER (LMR) command at Ta0.
5. Although not required by the Micron device, JEDEC specifies issuing another LMR command (A8 = L) prior to activating any bank.
6. PRE = PRECHARGE command, LMR = LOAD MODE REGISTER command, AR = AUTO REFRESH command, ACT = ACTIVE command, RA = Row Address,
BA = Bank Address
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T0
T1
Ta0
Tb0
Tc0
Td0
Te0
Tf0
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DON T CARE
BA
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()()
()()
()()
()()
()()
()()
()()
()()
()()
()()
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