- 您现在的位置：买卖IC网 > PDF目录4481 > MT48H8M16LFB4-75:K TR (Micron Technology Inc)IC SDRAM 128MBIT 133MHZ 54VFBGA PDF资料下载
参数资料
| 型号： | MT48H8M16LFB4-75:K TR |
| 厂商： | Micron Technology Inc |
| 文件页数： | 26/63页 |
| 文件大小： | 0K |
| 描述： | IC SDRAM 128MBIT 133MHZ 54VFBGA |
| 标准包装： | 1 |
| 格式 - 存储器： | RAM |
| 存储器类型： | 移动 SDRAM |
| 存储容量： | 128M（8Mx16） |
| 速度： | 133MHz |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 54-VFBGA |
| 供应商设备封装： | 54-VFBGA（8x8） |
| 包装： | 标准包装 |
| 其它名称： | 557-1531-6 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页当前第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页
128Mb: x16 Mobile SDRAM
Operation
In the case of a fixed-length burst being executed to completion, a PRECHARGE
command issued at the optimum time (as described above) provides the same opera-
tion that would result from the same fixed-length burst with auto precharge. The disad-
vantage of the PRECHARGE command is that it requires that the command and address
buses be available at the appropriate time to issue the command; the advantage of the
PRECHARGE command is that it can be used to truncate fixed-length bursts.
Fixed-length WRITE bursts can be truncated with the BURST TERMINATE command.
When truncating a WRITE burst, the input data applied coincident with the BURST
TERMINATE command will be ignored. The last data written (provided that DQM is
LOW at that time) will be the input data applied one clock previous to the BURST
TERMINATE command. This is shown in Figure 22 on page 27, where data n is the last
desired data element of a longer burst.
Figure 19:
Random WRITE Cycles
T0
T1
T2
T3
C LK
C OMMAND
ADDRE SS
DQ
WRITE
BANK,
C OL n
D IN
n
WRITE
BANK,
C OL a
D IN
a
WRITE
BANK,
C OL x
D IN
x
WRITE
BANK,
C OL m
D IN
m
DON ’ T C ARE
Notes:
1. Each WRITE command may be to any bank. DQM is LOW.
Figure 20:
WRITE-to-READ
T0
T1
T2
T3
T4
T5
C LK
C OMMAND
WRITE
NOP
READ
NOP
NOP
NOP
ADDRE SS
BANK,
C OL n
BANK,
C OL b
DQ
D IN
n
D IN
n +1
D OUT
b
D OUT
b +1
DON ’ T C ARE
Notes:
1. CL = 2 is used for illustration; the WRITE command may be to any bank, and the READ com-
mand may be to any bank. DQM is LOW.
PDF: 09005aef8237e877/Source: 09005aef8237e8d8
128Mb_x16 Mobile SDRAM_Y25M_2.fm - Rev. C 2/07 EN
26
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2006 Micron Technology, Inc. All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| HSM44DRYI | CONN EDGECARD 88POS DIP .156 SLD |
| HMM44DRYI | CONN EDGECARD 88POS DIP .156 SLD |
| RSC49DRYI-S734 | CONN EDGECARD 98POS DIP .100 SLD |
| RMC49DRYI-S734 | CONN EDGECARD 98POS DIP .100 SLD |
| EP4CGX30BF14C8 | IC CYCLONE IV GX FPGA 30K 169FBG |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT48H8M16LFB4-8 | 制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA |
| MT48H8M16LFB4-8 IT | 制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA |
| MT48H8M16LFB4-8 IT TR | 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
发布紧急采购，3分钟左右您将得到回复。