参数资料
型号: MT48H8M16LFB4-75:K TR
厂商: Micron Technology Inc
文件页数: 43/63页
文件大小: 0K
描述: IC SDRAM 128MBIT 133MHZ 54VFBGA
标准包装: 1
格式 - 存储器: RAM
存储器类型: 移动 SDRAM
存储容量: 128M(8Mx16)
速度: 133MHz
接口: 并联
电源电压: 1.7 V ~ 1.95 V
工作温度: 0°C ~ 70°C
封装/外壳: 54-VFBGA
供应商设备封装: 54-VFBGA(8x8)
包装: 标准包装
其它名称: 557-1531-6
128Mb: x16 Mobile SDRAM
Notes
23. The clock frequency must remain constant (stable clock is defined as a signal cycling
within timing constraints specified for the clock pin) during access or precharge
states (READ, WRITE, including t WR, and PRECHARGE commands). CKE may be
used to reduce the data rate.
24. Auto precharge mode only. The precharge timing budget ( t RP) begins at 7.5ns for -75
and 7ns for -8 after the first clock delay, after the last WRITE is executed. For auto pre-
charge mode, at least one clock cycle is required during t WR.
25. CKE is HIGH during REFRESH command period t RFC (MIN) else CKE is LOW.
26. Measurement is taken 500ms after entering into this operating mode to allow tester
measurement settling time.
27. Values for I DD 7 85°C 4 bank, 2 bank, and 1 bank are guaranteed for the entire temper-
ature range. All other I DD 7 values are estimated.
28. Deep power-down current is a nominal value at 25°C. This parameter is not tested.
PDF: 09005aef8237e877/Source: 09005aef8237e8d8
128Mb_x16 Mobile SDRAM_Y25M_2.fm - Rev. C 2/07 EN
43
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2006 Micron Technology, Inc. All rights reserved.
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MT48H8M16LFB4-8 制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA
MT48H8M16LFB4-8 IT 制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA
MT48H8M16LFB4-8 IT TR 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M(2M x 8,1M x 16) 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘