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参数资料
| 型号： | NAND256W3A0AN6F |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 32M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| 封装： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件页数： | 25/58页 |
| 文件大小： | 1406K |
| 代理商： | NAND256W3A0AN6F |
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NAND128-A, NAND256-A
Software algorithms
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7
Software algorithms
This section gives information on the software algorithms that Numonyx recommends to
implement to manage the bad blocks and extend the lifetime of the NAND device.
NAND flash memories are programmed and erased by Fowler-Nordheim tunneling using a
high voltage. Exposing the device to a high voltage for extended periods can cause the
oxide layer to be damaged. For this reason, the number of program and erase cycles is
limited (see Table 14: Program, erase times and program erase endurance cycles for the
values) and it is recommended to implement garbage collection, a wear-leveling algorithm
and an error correction code to extend the number of program and erase cycles and
increase the data retention.
For the integration of NAND memories into an application, Numonyx provides a full range of
software solutions such as file systems, sector managers, drivers, and code management.
Contact the nearest Numonyx sales office or visit www.numonyx.com for more details.
7.1
Bad block management
Devices with bad blocks have the same quality level and the same AC and DC
characteristics as devices where all the blocks are valid. A bad block does not affect the
performance of valid blocks because it is isolated from the bit line and common source line
by a select transistor.
The devices are supplied with all the locations inside valid blocks erased (FFh). The bad
block information is written prior to shipping. Any block where the 6th byte (x8 devices)/1st
word (x16 devices) in the spare area of the 1st page does not contain FFh is a bad block.
The bad block information must be read before any erase is attempted as the bad block
information may be erased. For the system to be able to recognize the bad blocks based on
the original information it is recommended to create a bad block table following the flowchart
7.2
Block replacement
Over the lifetime of the device additional bad blocks may develop. In this case the block has
to be replaced by copying the data to a valid block. These additional bad blocks can be
identified as attempts to program or erase them outputs errors to the status register.
As the failure of a page program operation does not affect the data in other pages in the
same block, the block can be replaced by re-programming the current data and copying the
rest of the replaced block to an available valid block. The Copy Back Program command can
be used to copy the data to a valid block.
Refer to Section 6.4: Copy back program for more details.
相关PDF资料 |
PDF描述 |
|---|---|
| NAND512W3A0AN1T | 64M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND512W3A0AN6T | 64M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND512W3A0BZB1E | 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 |
| NAND512W3A2AZB1E | 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 |
| NAND01GW3A3AZA1T | 128M X 8 FLASH 3V PROM, 12000 ns, PBGA63 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND256W3A0AZA6E | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 2.7V TO 3.6V 256MBIT 32MX8 12US 55VFBGA - Trays |
| NAND256W3A0AZA6F | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 2.7V TO 3.6V 256MBIT 32MX8 12US 55VFBGA - Tape and Reel |
| NAND256W3A0BE06 | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND256W3A0BN6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND256W3A0BN6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
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