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参数资料
型号： NAND256W3A0AN6F
厂商： NUMONYX
元件分类： PROM
英文描述： 32M X 8 FLASH 3V PROM, 35 ns, PDSO48
封装： 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件页数： 36/58页
文件大小： 1406K
代理商： NAND256W3A0AN6F
NAND128-A, NAND256-A
DC and AC parameters
41/58
Table 20.
AC characteristics for operations(1)
Symbol
Alt.
symbol
Parameter
3 V devices Unit
tALLRL1
tAR
Address Latch Low to
Read Enable Low
Read electronic signature
Min
10
ns
tALLRL2
Read cycle
Min
10
ns
tBHRL
tRR
Ready/Busy High to Read Enable Low
Min
20
ns
tBLBH1
Ready/Busy Low to
Ready/Busy High
Read busy time, 128-Mbit, 256-Mbit,
dual die
Max
12
s
tBLBH2
tPROG
Program busy time
Max
500
s
tBLBH3
tBERS
Erase busy time
Max
3
ms
tBLBH4
Reset busy time, during ready
Max
5
s
tWHBH1
tRST
Write Enable High to
Ready/Busy High
Reset busy time, during read
Max
5
s
Reset busy time, during program
Max
10
s
Reset busy time, during erase
Max
500
s
tCLLRL
tCLR
Command Latch Low to Read Enable Low
Min
10
ns
tDZRL
tIR
Data Hi-Z to Read Enable Low
Min
0
ns
tEHQZ
tCHZ
Chip Enable High to Output Hi-Z
Max
20
ns
tELQV
tCEA
Chip Enable Low to Output Valid
Max
45
ns
tRHRL
tREH
Read Enable High to
Read Enable Low
Read Enable High hold time
Min
15
ns
tRHQZ
tRHZ
Read Enable High to Output Hi-Z
Max
30
ns
TEHQX
TOH
Chip Enable High or Read Enable High to Output Hold
Min
10
ns
TRHQX
tRLRH
tRP
Read Enable Low to Read
Enable High
Read Enable pulse width
Min
25
ns
tRLRL
tRC
Read Enable Low to Read
Enable Low
Read cycle time
Min
50
ns
tRLQV
tREA
Read Enable Low to
Output Valid
Read Enable access time
Max
35
ns
Read ES access time(1)
tWHBH
tR
Write Enable High to
Ready/Busy High
Read busy time, 128-Mbit, 256-Mbit
dual die
Max
12
s
tWHBL
tWB
Write Enable High to Ready/Busy Low
Max
100
ns
tWHRL
tWHR
Write Enable High to Read Enable Low
Min
60
ns
tWLWL
tWC
Write Enable Low to Write
Enable Low
Write cycle time
Min
50
ns
1.
ES = electronic signature.
相关PDF资料
PDF描述
NAND512W3A0AN1T 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND512W3A0AN6T 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND512W3A0BZB1E 64M X 8 FLASH 3V PROM, 35 ns, PBGA55
NAND512W3A2AZB1E 64M X 8 FLASH 3V PROM, 35 ns, PBGA55
NAND01GW3A3AZA1T 128M X 8 FLASH 3V PROM, 12000 ns, PBGA63
相关代理商/技术参数
参数描述
NAND256W3A0AZA6E 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 2.7V TO 3.6V 256MBIT 32MX8 12US 55VFBGA - Trays
NAND256W3A0AZA6F 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 2.7V TO 3.6V 256MBIT 32MX8 12US 55VFBGA - Tape and Reel
NAND256W3A0BE06 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
NAND256W3A0BN6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND256W3A0BN6F 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
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