- 您现在的位置：买卖IC网 > PDF目录230133 > NAND256W3A0AN6F (NUMONYX) 32M X 8 FLASH 3V PROM, 35 ns, PDSO48 PDF资料下载
参数资料
| 型号： | NAND256W3A0AN6F |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 32M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| 封装： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件页数： | 8/58页 |
| 文件大小： | 1406K |
| 代理商： | NAND256W3A0AN6F |
第1页第2页第3页第4页第5页第6页第7页当前第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页
Signal descriptions
NAND128-A, NAND256-A
3.6
Read Enable (R)
Read Enable, R, controls the sequential data output during read operations. Data is valid
tRLQV after the falling edge of R. The falling edge of R also increments the internal column
address counter by one.
3.7
Write Enable (W)
The Write Enable input, W, controls writing to the Command Interface, Input Address and
Data latches. Both addresses and data are latched on the rising edge of Write Enable.
During power-up and power-down a recovery time of 10 s (min) is required before the
Command Interface is ready to accept a command. It is recommended to keep Write Enable
high during the recovery time.
3.8
Write Protect (WP)
The Write Protect pin is an input that provides hardware protection against unwanted
program or erase operations. When Write Protect is Low, VIL, the device does not accept
any program or erase operations.
It is recommended to keep the Write Protect pin Low, VIL, during power-up and power-down.
3.9
Ready/Busy (RB)
The Ready/Busy output, RB, is an open-drain output that can be used to identify if the P/E/R
controller is currently active.
When Ready/Busy is Low, VOL, a read, program or erase operation is in progress. When the
operation completes Ready/Busy goes High, VOH.
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low then indicates that one or more of the
memories is busy.
Refer to the Section 10.1: Ready/busy signal electrical characteristics for details on how to
calculate the value of the pull-up resistor.
3.10
VDD supply voltage
VDD provides the power supply to the internal core of the memory device. It is the main
power supply for all operations (read, program and erase).
An internal voltage detector disables all functions whenever VDD is below the VLKO threshold
(see paragraph Figure 35: Data protection) to protect the device from any involuntary
program/erase operations during power-transitions.
Each device in a system should have VDD decoupled with a 0.1 F capacitor. The PCB track
widths should be sufficient to carry the required program and erase currents
相关PDF资料 |
PDF描述 |
|---|---|
| NAND512W3A0AN1T | 64M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND512W3A0AN6T | 64M X 8 FLASH 3V PROM, 35 ns, PDSO48 |
| NAND512W3A0BZB1E | 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 |
| NAND512W3A2AZB1E | 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 |
| NAND01GW3A3AZA1T | 128M X 8 FLASH 3V PROM, 12000 ns, PBGA63 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND256W3A0AZA6E | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 2.7V TO 3.6V 256MBIT 32MX8 12US 55VFBGA - Trays |
| NAND256W3A0AZA6F | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 2.7V TO 3.6V 256MBIT 32MX8 12US 55VFBGA - Tape and Reel |
| NAND256W3A0BE06 | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND256W3A0BN6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND256W3A0BN6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
发布紧急采购，3分钟左右您将得到回复。