参数资料
型号: TMDXBDKFP5515
厂商: Texas Instruments
文件页数: 24/159页
文件大小: 0K
描述: KIT DEV FINGERPRINT C5515
标准包装: 1
传感器类型: 指纹
接口: USB
电源电压: 5V
嵌入式: 是,MCU,16 位
已供物品: 板,扩展板,线缆,迷你型 DVD,传感器
已用 IC / 零件: C5515
产品目录页面: 718 (CN2011-ZH PDF)
其它名称: 296-27452
SPRS645F – AUGUST 2010 – REVISED OCTOBER 2013
Table 2-8. External Memory Interface (EMIF) Terminal Functions (continued)
SIGNAL
NAME
NO.
TYPE (1)
(2)
OTHER (3)
(4)
DESCRIPTION
EMIF FUNCTIONAL PINS: SDRAM and mSDRAM ONLY
EMIF SDRAM/mSDRAM chip select 1 output
EM_CS1
A4
O/Z
DV DDEMIF
BH
Note: This pin may consume static power if configured as Hi-Z and not pulled high
or low. Prevent current drain by externally terminating the pin.
EMIF SDRAM/mSDRAM chip select 0 output
EM_CS0
B3
O/Z
DV DDEMIF
BH
Note: This pin may consume static power if configured as Hi-Z and not pulled high
or low. Prevent current drain by externally terminating the pin.
EMIF SDRAM/mSDRAM clock
EM_SDCLK
M3
O/Z
DV DDEMIF
BH
Note: This pin may consume static power if configured as Hi-Z and not pulled high
or low. Prevent current drain by externally terminating the pin.
EMIF SDRAM/mSDRAM clock enable
EM_SDCKE
N2
O/Z
DV DDEMIF
BH
Note: This pin may consume static power if configured as Hi-Z and not pulled high
or low. Prevent current drain by externally terminating the pin.
EMIF SDRAM/mSDRAM row address strobe
EM_SDRAS
A6
O/Z
DV DDEMIF
BH
Note: This pin may consume static power if configured as Hi-Z and not pulled high
or low. Prevent current drain by externally terminating the pin.
EMIF SDRAM/mSDRAM column strobe
EM_SDCAS
B4
O/Z
DV DDEMIF
BH
Note: This pin may consume static power if configured as Hi-Z and not pulled high
or low. Prevent current drain by externally terminating the pin.
24
Device Overview
Product Folder Links: TMS320C5515
Copyright ? 2010–2013, Texas Instruments Incorporated
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