参数资料
型号: TMDXBDKFP5515
厂商: Texas Instruments
文件页数: 89/159页
文件大小: 0K
描述: KIT DEV FINGERPRINT C5515
标准包装: 1
传感器类型: 指纹
接口: USB
电源电压: 5V
嵌入式: 是,MCU,16 位
已供物品: 板,扩展板,线缆,迷你型 DVD,传感器
已用 IC / 零件: C5515
产品目录页面: 718 (CN2011-ZH PDF)
其它名称: 296-27452
SPRS645F – AUGUST 2010 – REVISED OCTOBER 2013
5.9
5.9.1
External Memory Interface (EMIF)
The device supports several memories and external device interfaces, including: NOR Flash, NAND
Flash, SRAM, Non-Mobile SDRAM, and Mobile SDRAM (mSDRAM).
Note : The device can support non-mobile SDRAM under certain circumstances. The device also always
uses mobile SDRAM initialization, but it is able to support SDRAM memories that ignore the BA0 and BA1
pins for the 'load mode register' command. During the mobile SDRAM initialization, the device issues the
'load mode register' initialization command to two different addresses that differ in only the BA0 and BA1
address bits. These registers are the Extended Mode register and the Mode register. The Extended mode
register exists only in mSDRAM and not in non-mSDRAM. If a non-mobile SDRAM memory ignores bits
BA0 and BA1, the second loaded register value overwrites the first, leaving the desired value in the Mode
register and the non-mobile SDRAM will work with the device.
The EMIF provides an 8-bit or 16-bit data bus, an address bus width up to 21 bits, and 6 chip selects,
along with memory control signals.
The EM_A[20:15] address signals are multiplexed with the GPIO peripheral and controlled by the External
Bus Selection Register (EBSR). For more detail on the pin muxing, see the Section 3.6.1 , External Bus
Selection Register (EBSR) .
EMIF Asynchronous Memory Support
The EMIF supports asynchronous:
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SRAM memories
NAND Flash memories
NOR Flash memories
The EMIF data bus can be configured for both 8- or 16-bit width. The device supports up to 21 address
lines and four external wait/interrupt inputs. Up to four asynchronous chip selects are supported by EMIF
(EM_CS[5:2]).
Each chip select has the following individually programmable attributes:
5.9.2
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Data bus width
Read cycle timings: setup, hold, strobe
Write cycle timings: setup, hold, strobe
Bus turn around time
Extended Wait Option With Programmable Timeout
Select Strobe Option
NAND flash controller supports 1-bit and 4-bit ECC calculation on blocks of 512 bytes
EMIF Non-Mobile and Mobile Synchronous DRAM Memory Supported
The EMIF supports 16-bit non-mobile and mobile single data rate (SDR) SDRAM in addition to the
asynchronous memories listed in Section 5.9.1 , EMIF Asynchronous Memory Support . The supported
SDRAM and mobile SDRAM configurations are:
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One, two, and four bank SDRAM/mSDRAM devices
Supports devices with eight, nine, ten, and eleven column addresses
CAS latency of two or three clock cycles
16-bit data-bus width
3.3/2.75/2.5/1.8 -V LVCMOS interface that is separate from the rest of the chip I/Os.
One (EM_CS0) or two (EM_CS[1:0]) chip selects
Copyright ? 2010–2013, Texas Instruments Incorporated
Peripheral Information and Electrical Specifications
Product Folder Links: TMS320C5515
89
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