参数资料
型号: V58C2256324SAH-40
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 8M X 32 DDR DRAM, 0.6 ns, PBGA144
封装: LEAD FREE, BGA-144
文件页数: 14/37页
文件大小: 557K
代理商: V58C2256324SAH-40
21
V58C2256324SA Rev. 1.0 November 2003
ProMOS TECHNOLOGIES
V58C2256324SA
WritewithAutoprecharge(WRITEA)
IfA8ishighwhenaWritecommandisissued,theWritewithAuto-Prechargefunctionisperformed.Theinternalprechargebeginsafter
thewriterecoverytimetWRandtRAS(min)aresatisfied.
IfaWritewithAutoPrechargecommandisinitiated,theDDRSDRAMautomaticallyenterstheprechargeoperationatthefirstrising
edgeofCLKafterthelastvalidedgeofDQS(completionoftheburst)plusthewriterecoverytimetWR.Oncetheprechargeoperation
hasstarted,thebankcannotbereactivatedandthenewcommandcannotbeasserteduntilthePrechargetime(tRP)hasbeensatisfied.
IftRAS(min)hasnotbeensatisfiedyet,aninternalinterlockwilldelaytheprechargeoperationuntilitissatisfied.
WriteBurstwithAutoPrecharge
Note: tWRstartsatthefirstrisingedgeofclockafterthelastvalidedgeofthe4DQSx.
Table
ConcurrentWriteAutoPrechargeSupport
WhenWritewithAutoPrechargeisasserted,newcommandscanbeassertedatT3..T8asshowninTable.
AnInterruptofarunningWRITEburstwithAutoPrechargei.e.atT3tothesamebankwithanotherWRITE+APcommandisallowed
aslongastheburstisrunning,itwillextendthebeginoftheinternalPrechargeoperationtothelastWRITE+APcommand.
InterruptsofarunningWRITEburstwithAutoPrechargei.e.atT3arenotallowedwhendoingconcurrentWRITEístoanotheractive
bank.ConsecutiveWRITEorWRITE+APbursts(T4..T7)tootheropenbanksarepossible.ACTIVATEorPRECHARGEcommandsto
anotherbankarealwayspossiblewhileaWRITEwithAutoPrechargeoperationisinprogress.
Asserted
Command
ForsameBank
FordifferentBank
T3
T4
T5
T6
T7
T8
T3
T4
T5
T6
T7
WRITE
NONONONONO
NO
YES
WRITE+AP
YES
NO
YES
READ
NO
YES
READ+AP
NONONONONO
NO
NONONO
NO
YES
ACTIVATE
NO
YES
PRECHARGE
NONONONONO
NO
YES
WRITEA
+AP
CLK
BANKA
ACTIVATE
Command
NOP
Burstlength=4
DQSx
DQx
D-in
0
D-in
1
D-in
2
D-in
3
Beginof
AutoPrecharge
BL/2
NOP
T0
T1
T2
T3
T4
T5
T6
T7
T8
tRAS(min)
tRP
tWR
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