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参数资料
| 型号： | V58C2256324SAH-40 |
| 厂商： | PROMOS TECHNOLOGIES INC |
| 元件分类： | DRAM |
| 英文描述： | 8M X 32 DDR DRAM, 0.6 ns, PBGA144 |
| 封装： | LEAD FREE, BGA-144 |
| 文件页数： | 14/37页 |
| 文件大小： | 557K |
| 代理商： | V58C2256324SAH-40 |
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V58C2256324SA Rev. 1.0 November 2003
ProMOS TECHNOLOGIES
V58C2256324SA
WritewithAutoprecharge(WRITEA)
IfA8ishighwhenaWritecommandisissued,theWritewithAuto-Prechargefunctionisperformed.Theinternalprechargebeginsafter
thewriterecoverytimetWRandtRAS(min)aresatisfied.
IfaWritewithAutoPrechargecommandisinitiated,theDDRSDRAMautomaticallyenterstheprechargeoperationatthefirstrising
edgeofCLKafterthelastvalidedgeofDQS(completionoftheburst)plusthewriterecoverytimetWR.Oncetheprechargeoperation
hasstarted,thebankcannotbereactivatedandthenewcommandcannotbeasserteduntilthePrechargetime(tRP)hasbeensatisfied.
IftRAS(min)hasnotbeensatisfiedyet,aninternalinterlockwilldelaytheprechargeoperationuntilitissatisfied.
WriteBurstwithAutoPrecharge
Note: tWRstartsatthefirstrisingedgeofclockafterthelastvalidedgeofthe4DQSx.
Table
ConcurrentWriteAutoPrechargeSupport
WhenWritewithAutoPrechargeisasserted,newcommandscanbeassertedatT3..T8asshowninTable.
AnInterruptofarunningWRITEburstwithAutoPrechargei.e.atT3tothesamebankwithanotherWRITE+APcommandisallowed
aslongastheburstisrunning,itwillextendthebeginoftheinternalPrechargeoperationtothelastWRITE+APcommand.
InterruptsofarunningWRITEburstwithAutoPrechargei.e.atT3arenotallowedwhendoingconcurrentWRITEístoanotheractive
bank.ConsecutiveWRITEorWRITE+APbursts(T4..T7)tootheropenbanksarepossible.ACTIVATEorPRECHARGEcommandsto
anotherbankarealwayspossiblewhileaWRITEwithAutoPrechargeoperationisinprogress.
Asserted
Command
ForsameBank
FordifferentBank
T3
T4
T5
T6
T7
T8
T3
T4
T5
T6
T7
WRITE
NONONONONO
NO
YES
WRITE+AP
YES
NO
YES
READ
NO
YES
READ+AP
NONONONONO
NO
NONONO
NO
YES
ACTIVATE
NO
YES
PRECHARGE
NONONONONO
NO
YES
WRITEA
+AP
CLK
BANKA
ACTIVATE
Command
NOP
Burstlength=4
DQSx
DQx
D-in
0
D-in
1
D-in
2
D-in
3
Beginof
AutoPrecharge
BL/2
NOP
T0
T1
T2
T3
T4
T5
T6
T7
T8
tRAS(min)
tRP
tWR
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相关代理商/技术参数 |
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