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参数资料
| 型号： | V58C2256324SAH-40 |
| 厂商： | PROMOS TECHNOLOGIES INC |
| 元件分类： | DRAM |
| 英文描述： | 8M X 32 DDR DRAM, 0.6 ns, PBGA144 |
| 封装： | LEAD FREE, BGA-144 |
| 文件页数： | 25/37页 |
| 文件大小： | 557K |
| 代理商： | V58C2256324SAH-40 |
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31
V58C2256324SA Rev. 1.0 November 2003
ProMOS TECHNOLOGIES
V58C2256324SA
DC Characteristics
Recommended operating conditions Unless Otherwise Noted, TA=0 to 70°C
Notes: 1. Measured with outputs open.
2. Refresh period is 32ms.
Parameter
Symbol
Test Condition
Version
Unit Note
-28
-33
-36
-40
Operating Current
(One Bank Active)
ICC1
Burst Lenth = 2 tRC >= tRC(min)
IOL= 0mA, tCK = tCK(min)
200
190
180
170
mA
1
Precharge Standby Current in
Power-down mode
ICC2P
CKE <= VIL(max), tCK = tCK(min)
30
25
20
15
mA
Precharge Standby Current in Non
Power-down mode
ICC2N
CKE >=VIH(min), CS >=VIH(min),
tCK = tCK(min)
100
90
80
70
mA
Active Standby Current power-down mode
ICC3P
CKE <= VIL(max), tCK = tCK(min)
30
25
20
15
mA
Active Standby Current in in Non
Power-down mode
ICC3N
CKE >= VIH(min), CS >= VIH(min),
tCK = tCK(min)
150
140
130
120
mA
Operating Current
(Burst Mode)
ICC4
IOL = 0mA, tCK= tCK(min),
Page Burst, All Banks activated
500
480
460
440
mA
1
Auto Refresh Current
ICC5
tRC >= tRFC(min)
480
470
460
450
mA
2
Self Refresh Current
ICC6
CKE =< 0.2V (Normal)
1.5
mA
(Low-Power)
1
mA
.
Absolute Maximum Ratings
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to VSS
VDD, VDDQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1.6
W
Short circuit current
IOS
50
mA
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