参数资料
型号: W949D2CBJX5E
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 16M X 32 DDR DRAM, 5 ns, PBGA90
封装: 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90
文件页数: 1/60页
文件大小: 1160K
代理商: W949D2CBJX5E
W949D6CB / W949D2CB
512Mb Mobile LPDDR
Publication Release Date: Jun, 14, 2011
- 1 -
Revision A01-006
TABLE OF CONTENTS
相关PDF资料
PDF描述
WF128K32N-150HC5 512K X 8 FLASH 5V PROM MODULE, 150 ns, HIP66
WPS512K8LB-85GM 512K X 8 STANDARD SRAM, 85 ns, PDSO32
WPS128K32GV-17PJI 512K X 8 MULTI DEVICE SRAM MODULE, 17 ns, PQMA68
WF2M32B-150HM5 8M X 8 FLASH 5V PROM MODULE, 150 ns, CHIP66
WF2M32B-120G2UC5 8M X 8 FLASH 5V PROM MODULE, 120 ns, CQFP68
相关代理商/技术参数
参数描述
W949D2CBJX5ETR 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ
W949D2CBJX5I 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA
W949D2CBJX5I TR 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ, INDUST
W949D2CBJX6E 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA
W949D2CBJX6ETR 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 166MHZ, 65NM