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参数资料
| 型号： | W949D2CBJX5E |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 16M X 32 DDR DRAM, 5 ns, PBGA90 |
| 封装： | 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90 |
| 文件页数： | 27/60页 |
| 文件大小： | 1160K |
| 代理商： | W949D2CBJX5E |
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W949D6CB / W949D2CB
512Mb Mobile LPDDR
Publication Release Date: Jun, 14, 2011
- 33 -
Revision A01-006
1) DO n=Data Out from column n
2) Cases shown are either uninterrupted of 4, or interrupted bursts of 8 or 16
3) Shown with nominal tAC,tDQSCK and tDQSQ
4) Precharge may be applied at (BL/2) tCK after the READ command.
5) Note that Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks.
6) The ACTIVE command may be applied if tRC has been met.
CL=2
DO n
= Don't Care
BA,Col n
READ
NOP
PRE
NOP
CK
Command
Address
DQS
DQ
DQS
DQ
CL=3
Bank
(a or all)
BA,Row
tRP
7.5.11 Burst Terminate of Read
The BURST TERMINATE command is used to truncate read bursts (with Auto Pre-charge disabled). The most
recently registered READ command prior to the BURST TERMINATE command will be truncated. Note that the
BURST TERMINATE command is not bank specific.
This command should not be used to terminate write bursts.
(High)
CK
CKE
CS
RAS
CAS
WE
A0-An
BA0,BA1
= Don't Care
7.6 Write
The WRITE command is used to initiate a burst write access to an active row, with a burst length as set in the Mode
Register. BA0 and BA1 select the bank, and the address inputs select the starting column location. The value of A10
determines whether or not Auto Pre-charge is used. If Auto Pre-charge is selected, the row being accessed will be
pre-charged at the end of the write burst; if Auto Pre-charge is not selected, the row will remain open for subsequent
accesses.
相关PDF资料 |
PDF描述 |
|---|---|
| WF128K32N-150HC5 | 512K X 8 FLASH 5V PROM MODULE, 150 ns, HIP66 |
| WPS512K8LB-85GM | 512K X 8 STANDARD SRAM, 85 ns, PDSO32 |
| WPS128K32GV-17PJI | 512K X 8 MULTI DEVICE SRAM MODULE, 17 ns, PQMA68 |
| WF2M32B-150HM5 | 8M X 8 FLASH 5V PROM MODULE, 150 ns, CHIP66 |
| WF2M32B-120G2UC5 | 8M X 8 FLASH 5V PROM MODULE, 120 ns, CQFP68 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W949D2CBJX5ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ |
| W949D2CBJX5I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA |
| W949D2CBJX5I TR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ, INDUST |
| W949D2CBJX6E | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA |
| W949D2CBJX6ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 166MHZ, 65NM |
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