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参数资料
| 型号： | W949D2CBJX5E |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 16M X 32 DDR DRAM, 5 ns, PBGA90 |
| 封装： | 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90 |
| 文件页数： | 51/60页 |
| 文件大小： | 1160K |
| 代理商： | W949D2CBJX5E |
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W949D6CB / W949D2CB
512Mb Mobile LPDDR
Publication Release Date: Jun, 14, 2011
- 55 -
Revision A01-006
8.5.2 Output Slew Rate Characteristics
PARAMETER
MIN
MAX
UNIT
NOTES
Pull-up and Pull-Down Slew Rate for Full Strength Driver
0.7
2.5
V/ns
1,2
Pull-up and Pull-Down Slew Rate for Three-Quarter Strength Driver
0.5
1.75
V/ns
1,2
Pull-up and Pull-Down Slew Rate for Half Strength Driver
0.3
1.0
V/ns
1,2
Output Slew rate Matching ratio (Pull-up to Pull-down)
0.7
1.4
-
3
Notes:
1.
Measured with a test load of 20 pF connected to VSSQ.
2.
Output slew rate for rising edge is measured between VILD(DC) to VIHD(AC) and for falling edge between VIHD(DC) to VILD(AC).
3.
The ratio of pull-up slew rate to pull-down slew rate is specified for the same temperature and voltage, over the entire temperature and
voltage range. For a given output, it represents the maximum difference between pull-up and pull-down drivers due to process variation.
8.5.3 AC Overshoot/Undershoot Specification
PARAMETER
SPECIFICATION
Maximum peak amplitude allowed for overshoot
0.5 V
Maximum peak amplitude allowed for undershoot
0.5 V
The area between overshoot signal and VDD must be less than or equal to
3 V-ns
The area between undershoot signal and GND must be less than or equal to
3 V-ns
8.5.4 AC Overshoot and Undershoot Definition
VDD
VSS
2.5
2.0
1.5
1.0
0.5
0
-0.5
Overshoot Area
Undershoot Area
Max Amplitude = 0.5V
Max Area = 3V-ns
V
o
lta
g
e
(V
)
Time
(ns)
相关PDF资料 |
PDF描述 |
|---|---|
| WF128K32N-150HC5 | 512K X 8 FLASH 5V PROM MODULE, 150 ns, HIP66 |
| WPS512K8LB-85GM | 512K X 8 STANDARD SRAM, 85 ns, PDSO32 |
| WPS128K32GV-17PJI | 512K X 8 MULTI DEVICE SRAM MODULE, 17 ns, PQMA68 |
| WF2M32B-150HM5 | 8M X 8 FLASH 5V PROM MODULE, 150 ns, CHIP66 |
| WF2M32B-120G2UC5 | 8M X 8 FLASH 5V PROM MODULE, 120 ns, CQFP68 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W949D2CBJX5ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ |
| W949D2CBJX5I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA |
| W949D2CBJX5I TR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ, INDUST |
| W949D2CBJX6E | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA |
| W949D2CBJX6ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 166MHZ, 65NM |
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