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参数资料
| 型号： | W949D2CBJX5E |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 16M X 32 DDR DRAM, 5 ns, PBGA90 |
| 封装： | 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90 |
| 文件页数： | 31/60页 |
| 文件大小： | 1160K |
| 代理商： | W949D2CBJX5E |
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W949D6CB / W949D2CB
512Mb Mobile LPDDR
Publication Release Date: Jun, 14, 2011
- 37 -
Revision A01-006
7.6.7 Random Write Cycles
Full-speed random write accesses within a page or pages can be performed as shown in figure below.
BA,Col n
BA,Col b
WRITE
NOP
CK
Command
Address
1) Dl b etc.= Data in to column b, etc.;
b’, etc.= the next Data In following Dl b, etc. according to the programmed burst order
2) Programmed burst length = 2, 4, 8 or 16 in cases shown. If burst of 4,8 or 16, burst would be truncated
3) Each WRITE command may be to any active bank and may be to the same or different devices.
WRITE
= Don't Care
DQS
DQ
DM
tDQSSmax
BA,Col a
BA,Col x
BA,Col n
BA,Col g
Di b
Di b’
Di x
Di x’
Di n
Di n’
Di a
Di a’
7.6.8 Write to Read
Data for any Write burst may be followed by a subsequent READ command.
7.6.9 Non-Interrupting Write to Read
To follow a Write without truncating the write burst, tWTR should be met as shown in the figure below.
BA,Col b
WRITE
NOP
CK
Command
Address
1) Dl b = Data in to column b
3 subsequent elements of Data In are applied in the programmed order following DI b.
2) A non-interrupted burst of 4 is shown.
3) tWTR is referenced from the positive clock edge after the last Data In pair.
4) A10 is LOW with the WRITE command (Auto Precharge is disabled)
5) The READ and WRITE commands are to the same device but not necessarily to the same bank.
NOP
READ
= Don't Care
DQS
DQ
DM
tDQSSmax
BA,Col n
tWTR
CL=3
DI b
NOP
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| WPS128K32GV-17PJI | 512K X 8 MULTI DEVICE SRAM MODULE, 17 ns, PQMA68 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W949D2CBJX5ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ |
| W949D2CBJX5I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA |
| W949D2CBJX5I TR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ, INDUST |
| W949D2CBJX6E | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA |
| W949D2CBJX6ETR | 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 166MHZ, 65NM |
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