参数资料
型号: COP8CCR9KMT8
厂商: National Semiconductor
文件页数: 18/111页
文件大小: 0K
描述: IC MCU EEPROM 8BIT 32K 56-TSSOP
标准包装: 34
系列: COP8™ 8C
核心处理器: COP8
芯体尺寸: 8-位
速度: 20MHz
连通性: Microwire/Plus(SPI),UART/USART
外围设备: 欠压检测/复位,POR,PWM,WDT
输入/输出数: 49
程序存储器容量: 32KB(32K x 8)
程序存储器类型: 闪存
RAM 容量: 1K x 8
电压 - 电源 (Vcc/Vdd): 2.7 V ~ 5.5 V
数据转换器: A/D 16x10b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 56-TFSOP(0.240",6.10mm 宽)
包装: 管件
其它名称: *COP8CCR9KMT8
SNOS535I – OCTOBER 2000 – REVISED MARCH 2013
A/D Converter Electrical Characteristics (
40°C ≤ TA ≤ +85°C unless otherwise noted) (Single-ended mode
only) (continued)
Datasheet min/max specification limits are ensured by design, test, or statistical analysis.
Parameter
Conditions
Min
Typ
Max
Units
Analog Input Capacitance
7
pF
Conversion Clock Period
4.5V
≤ VCC < 5.5V
0.8
30
s
2.7V
≤ VCC < 4.5V
1.2
30
s
Conversion Time (including S/H Time)
15
A/D
Conversion
Clock
Cycles
Operating Current on AVCC
AVCC = 5.5V
0.2
0.6
mA
3.5
DC Electrical Characteristics (
40°C ≤ T
A ≤ +125°C)
Datasheet min/max specification limits are ensured by design, test, or statistical analysis.
Parameter
Conditions
Min
Typ
Max
Units
Operating Voltage
4.5
5.5
V
Power Supply Rise Time
10
50 x 106
ns
Power Supply Ripple(1)
Peak-to-Peak
0.1 VCC
V
Supply Current(2)
High Speed Mode
CKI = 10 MHz
VCC = 5.5V, tC = 0.5 μs
14.5
mA
CKI = 3.33 MHz
VCC = 4.5V, tC = 1.5 μs
7
mA
Dual Clock Mode
14.5
CKI = 10 MHz, Low Speed OSC = 32 kHz
VCC = 5.5V, tC = 0.5 μs
mA
CKI = 3.33 MHz, Low Speed OSC = 32 kHz
VCC = 4.5V, tC = 1.5 μs
7
mA
Low Speed Mode
110
Low Speed OSC = 32 kHz
VCC = 5.5V
65
μA
HALT Current with BOR Disabled(3)
High Speed Mode
VCC = 5.5V, CKI = 0 MHz
<4
40
μA
Dual Clock Mode
VCC = 5.5V, CKI = 0 MHz, Low
<9
50
μA
Speed OSC = 32 kHz
Low Speed Mode
VCC = 5.5V, CKI = 0 MHz, Low
<9
50
μA
Speed OSC = 32 kHz
Idle Current (2)
High Speed Mode
CKI = 10 MHz
VCC = 5.5V, tC = 0.5 μs
2.7
mA
Dual Clock Mode
CKI = 10 MHz, Low Speed OSC = 32 kHz
VCC = 5.5V, tC = 0.5 μs
2.7
mA
Low Speed Mode
Low Speed OSC = 32 kHz
VCC = 5.5V
30
70
μA
Supply Current for BOR Feature
VCC = 5.5V
45
μA
High Brownout Trip Level (BOR Enabled)
4.17
4.28
4.5
V
Input Levels (VIH, VIL)
Logic High
0.8 VCC
V
Logic Low
0.16 VCC
V
(1)
Maximum rate of voltage change must be < 0.5 V/ms.
(2)
Supply and IDLE currents are measured with CKI driven with a square wave Oscillator, CKO driven 180° out of phase with CKI, inputs
connected to VCC and outputs driven low but not connected to a load.
(3)
The HALT mode will stop CKI from oscillating. Measurement of IDD HALT is done with device neither sourcing nor sinking current; with
L. A. B, C, E, F, G0, and G2–G5 programmed as low outputs and not driving a load; all D outputs programmed low and not driving a
load; all inputs tied to VCC; A/D converter and clock monitor and BOR disabled. Parameter refers to HALT mode entered via setting bit 7
of the G Port data register.
14
Electrical Specifications
Copyright 2000–2013, Texas Instruments Incorporated
Product Folder Links: COP8CBR9 COP8CCR9 COP8CDR9
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