参数资料
型号: DDRSDRAM
厂商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: DDR SDRAM Specification Version 0.61
中文描述: DDR SDRAM的规格版本0.61
文件页数: 24/49页
文件大小: 750K
代理商: DDRSDRAM
- 24 of 63 -
REV. 0.61 August 9. '99
128Mb DDR SDRAM
Target
3.3.6 Write Interrupted by a Write
A Burst Write can be interrupted before completion of the burst by a new Write command, with the only restric-
tion that the interval that separates the commands must be at least one clock cycle. When the previous burst
is interrupted, the remaining addresses are overridden by the new address and data will be written into the
device until the programmed burst length is satisfied.
Command
< Burst Length=4 >
NOP
WRITE A
WRITE b
NOP
NOP
NOP
NOP
NOP
NOP
DQS
DQ
s
Din A
0
Din A
1
Din B
0
Din B
1
Din B
2
Din B
3
1t
CK
2
0
1
5
3
4
8
6
7
CK
CK
Figure 14. Write interrupted by a write timing
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