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| 型号： | DDRSDRAM |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR SDRAM Specification Version 0.61 |
| 中文描述： | DDR SDRAM的规格版本0.61 |
| 文件页数： | 40/49页 |
| 文件大小： | 750K |
| 代理商： | DDRSDRAM |
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- 40 of 60 -
REV. 0.0 Apr. '99
PC 200/266 DDR SDRAM
7.1 DC Specifications
128Mb DDR SDRAM
Table 12. DC specifications
Parameter
Symbol
Test Condition
Version
-Y
Unit
Note
-Z
-0
Precharge Power-down
Standby Current
Idle Standby Current
Active Power-down
Standby Current
IDD2P
CKE
≤
VIL(max), tCK=tCK(min), All banks idle
25
mA
IDD2N
CKE
≥
VIH(min), CS
≥
VIH(min), tCK=tCK(min)
45
mA
IDD3P
All banks idle, CKE
≤
VIL(max), tCK=tCK(min)
40
mA
Active Standby Current
IDD3N
One bank; Active-Precharge, tRC=tRAS(max),
tCK=tCK(min)
tRC
=
tRFC(min)
CKE
≤
0.2V
60
mA
Auto Refresh Current
Self Refresh Current
IDD5
IDD6
200
165
mA
mA
2
2.5
Parameter
Symbol
Test Condition
Version
-Y
Unit
Note
-Z
-0
Operating Current
(One Bank Active)
IDD0
tRC
=
tRC(min) tCK=tCK(min)
Active-Precharge
Burst=2 tRC
=
tRC(min), CL=2.5
I
OUT
=0mA, Active-Read-Precharge
Burst=2, CL=2.5, tCK=tCK(min), I
OUT
=0mA
Burst=2, CL=2.5, tCK=tCK(min)
T.B.D
T.B.D
T.B.D
mA
1
Operating Current
(One Bank Active)
IDD1
135
135
115
mA
Operating Current(Read)
Operating Current(Write)
IDD4R
IDD4W
170
130
170
130
145
110
mA
mA
1
1
Parameter
Symbol
Test Condition
Version
-Y
Unit
Note
-Z
-0
Operating Current
(One Bank Active)
IDD0
tRC
=
tRC(min) tCK=tCK(min)
Active-Precharge
Burst=2 tRC
=
tRC(min), CL=2.5
I
OUT
=0mA, Active-Read-Precharge
Burst=2, CL=2.5, tCK=tCK(min), I
OUT
=0mA
Burst=2, CL=2.5, tCK=tCK(min)
T.B.D
T.B.D
T.B.D
mA
1
Operating Current
(One Bank Active)
IDD1
125
125
105
mA
Operating Current(Read)
Operating Current(Write)
IDD4R
IDD4W
150
115
150
115
125
95
mA
mA
1
1
16Mx8
128Mb(Common)
Note 1.Measured with outputs open.
2. Refresh period is 64ms.
Parameter
Symbol
Test Condition
Version
-Y
Unit
Note
-Z
-0
Operating Current
(One Bank Active)
IDD0
tRC
=
tRC(min) tCK=tCK(min)
Active-Precharge
Burst=2 tRC
=
tRC(min), CL=2.5
I
OUT
=0mA, Active-Read-Precharge
Burst=2, CL=2.5, tCK=tCK(min), I
OUT
=0mA
Burst=2, CL=2.5, tCK=tCK(min)
T.B.D
T.B.D
T.B.D
mA
1
Operating Current
(One Bank Active)
IDD1
145
140
125
mA
Operating Current(Read)
IDD4R
200
200
175
mA
1
Operating Current(Write)
IDD4W
150
150
130
mA
1
8Mx16
32Mx4
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相关代理商/技术参数 |
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|---|---|
| DDRSDRAM1111 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR SDRAM Specification Version 1.0 |
| DDR-SJE-Q2 | 制造商:DOMINANT 制造商全称:DOMINANT Semiconductors 功能描述:LED Colored Resin |
| DDR-SJE-Q2R-1 | 制造商:DOMINANT 制造商全称:DOMINANT Semiconductors 功能描述:LED Colored Resin |
| DDR-SJE-R1 | 制造商:DOMINANT 制造商全称:DOMINANT Semiconductors 功能描述:LED Colored Resin |
| DDR-SJE-R2 | 制造商:DOMINANT 制造商全称:DOMINANT Semiconductors 功能描述:LED Colored Resin |
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